Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Takaharu Tsuji"'
Autor:
Hideto Hidaka, Yoshio Matsuda, Hiroaki Tanizaki, Masanori Hayashikoshi, Hiroyuki Kondo, Takaharu Tsuji, Kiyoshi Kawabata, Yasumitsu Murai, Hideyuki Noda, Koji Nii
Publikováno v:
IEICE Transactions on Electronics. :287-295
Autor:
M. Ishikawa, A. Shibayama, Shigeki Tomishima, M. Senoh, H. Tanizaki, Hideto Hidaka, M. Maruta, T. Inokuchi, T. Kawasaki, Tsukasa Ooishi, W. Abe, K. Takahashi, S. Sakamoto, Hirohito Kikukawa, H. Kato, Y. Fukushima, Takaharu Tsuji, M. Nirro, T. Uchikoba
Publikováno v:
IEEE Journal of Solid-State Circuits. 37:932-940
This paper describes the 32-Mb and the 64-Mb embedded DRAM core with high efficient redundancy, which is fabricated using 0.13-/spl mu/m triple-well 4-level Cu embedded DRAM technology. Core size of 18.9 mm/sup 2/ and cell efficiency of 51.3% for the
Autor:
W. Abe, H. Tanizaki, Hirohito Kikukawa, T. Kawasaki, Takaharu Tsuji, H. Kato, Tsukasa Ooishi, M. Ishikawa, K. Takahashi, M. Maruta, Hideto Hidaka, S. Sakamoto, Y. Fukushima, T. Inokuchi, T. Uchikoba, Shigeki Tomishima, A. Shibayama, M. Niiro, M. Senoh
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1728-1737
This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-/spl mu/m triple-well 4-level Cu embedded DRAM technology, which is suitable for portable equipment of MPEG applications. This macro can operate 230-MHz random column access even
Autor:
Tomoyoshi Suenobu, Hiroyoshi Kanai, Satohiro Yoshida, Takaharu Tsuji, Gin-ya Adachi, Hiroki Sakaguchi
Publikováno v:
Bulletin of the Chemical Society of Japan. 64:3522-3527
Analyses of the local structure around La and Ni atoms in amorphous LaNi5.0 films have been performed using the extended X-ray absorption fine structure (EXAFS), and the effect of the structure on the difference of hydrogen absorption characteristics
Autor:
H. Tanizaki, Hideto Hidaka, Yasumitsu Murai, Y. Yamaguchi, J. Otani, Takaharu Tsuji, Masanori Hayashikoshi
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
A high-density MRAM cell structure, 1T-4MTJ cell is successfully applied to a Toggle-mode MRAM, with reduced effective cell array size and symmetrical Read/Write operations. A lMb-lT-4MTJ Toggle MRAM with 66 MHz operation (tAC = 43.4 nsec) is demonst
Autor:
Hideto Hidaka, Shuichi Ueno, Masanori Hayashikoshi, Yasumitsu Murai, H. Tanizaki, Y. Yamaguchi, H. Furuta, J. Otani, Takaharu Tsuji, Tsukasa Oishi
Publikováno v:
2006 IEEE Asian Solid-State Circuits Conference.
A high-density and high-speed memory cell named 1-transistor 4-magnetic tunnel junction (1T-4MTJ) has been proposed for magnetic random access memory (MRAM). The new 1T-4MTJ cell has been successfully demonstrated by a 1 Mb MRAM test device, using a
Autor:
M. Ishikawa, Shuichi Ueno, H. Tanizaki, Y. Yamaguchi, Hideto Hidaka, J. Otani, Tsukasa Oishi, Takaharu Tsuji
Publikováno v:
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525).
A 1Mbit MRAM with a 0.81 /spl mu/m/sup 2/ 1-Transistor 1-Magnetic Tunnel Junction (1Tr-1MTJ) cell using 0.13 /spl mu/m 4LM logic technology has been produced. A folded-bitline sensing and common write word-line scheme with dummy row architecture achi
Autor:
Takaharu Tsuji, H. Tanizaki, M. Ishikawa, Hideto Hidaka, M. Niiro, K. Takahashi, Akinori Shibayama, M. Senoh, T. Uchikoba, Shigeki Tomishima, Hirohito Kikukawa, T. Inokuchi, Y. Fukushima, H. Kato, S. Sakamoto, M. Maruta, T. Ooishi, W. Abe, T. Kawasaki
Publikováno v:
2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).
Previous embedded DRAMs (eDRAMs) have the dual ports on the sense amplifier and wide I/O buses on memory arrays for high data rate in graphic controller chips. This causes decreased cell efficiency and increased power consumption in burst operation c