Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Takabatake, Nobuya"'
Publikováno v:
Electronics & Communications in Japan. Jan2015, Vol. 98 Issue 1, p31-35. 5p.
Publikováno v:
In Materials Science & Engineering B 2002 91:186-188
Publikováno v:
Electronics & Communications in Japan. Feb2013, Vol. 96 Issue 2, p65-70. 6p. 2 Diagrams, 5 Graphs.
Publikováno v:
In Applied Surface Science 2000 159:594-598
Publikováno v:
Electronics & Communications in Japan, Part 2: Electronics. Oct2003, Vol. 86 Issue 10, p1-8. 8p.
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 37:77-81
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In order to clarify the detailed operation mechanism of a semiconductor device, it is necessary to know the information of the depletion layer in the depth direction. With the Schottky barrier of a metal/semiconductor (MIS) struc
In order to clarify the detailed operation mechanism of a semiconductor device, it is necessary to know the information of the depletion layer in the depth direction. With the Schottky barrier of a metal/semiconductor (MIS) struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::3f8457ae749ca424e6ae9008f6e2a19a
https://kait.repo.nii.ac.jp/records/1098
https://kait.repo.nii.ac.jp/records/1098
Autor:
Yamaguchi, Satoshi, Murakami, Masahiko, Takabatake, Nobuya, Misu, Takayuki, Goto, Miki, Arai, Toshihiko
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 34:41-43
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Hot-filament chemical vapor deposition (CVD) of diamond was used to obtain polycrystalline diamond thin film electrodes on silicon substrates. Deposition was carried out using by a mixture of CH4/H2 gases through a heated reactor
Hot-filament chemical vapor deposition (CVD) of diamond was used to obtain polycrystalline diamond thin film electrodes on silicon substrates. Deposition was carried out using by a mixture of CH4/H2 gases through a heated reactor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::47bcf271bf7cfd76bd0467cc07482c22
https://kait.repo.nii.ac.jp/records/1057
https://kait.repo.nii.ac.jp/records/1057
Autor:
Takabatake, Nobuya, Kobayashi, Takeshi
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 19:117-121
application/pdf
電気電子工学
電気電子工学
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::49deda9126977d383d55303b4de87f91
https://kait.repo.nii.ac.jp/records/731
https://kait.repo.nii.ac.jp/records/731
Autor:
Kobayashi, Takeshi, Takabatake, Nobuya
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 18:135-139
application/pdf
電気電子工学
電気電子工学
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::1f4d6c1b93f5a9a3e8e2d0be849bdd99
https://kait.repo.nii.ac.jp/records/690
https://kait.repo.nii.ac.jp/records/690
Autor:
Kobayashi, Takeshi, Takabatake, Nobuya
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 17:176-181
application/pdf
電気電子工学
電気電子工学
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::cf08c753cf9cb193e2ec5feee156effb
https://kait.repo.nii.ac.jp/records/669
https://kait.repo.nii.ac.jp/records/669