Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Takaaki Kawahara"'
Autor:
Takashi Kuroi, Yasuo Inoue, Takaaki Kawahara, Hiroshi Umeda, Yasutaka Horiba, Tomohiro Yamashita, Taketoshi Ikeda, Katsuyuki Horita, M. Ishibashi
Publikováno v:
Japanese Journal of Applied Physics. 46:2079-2083
In this paper, in order to obtain layout-independent transistors in recent fine-pitched LSI circuits, a completely stress-controlled shallow trench isolation (STI) process is proposed. In this process, a single-layered spin-on dielectric (SOD) film i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67ae07874bdf598615aedcff865d1b1
https://doi.org/10.1143/jjap.46.2079
https://doi.org/10.1143/jjap.46.2079
Autor:
Masahiko Higashi, Jiro Yugami, S. Yamanari, Masao Inoue, Kenichi Mori, Kazuhito Honda, Yukio Nishida, M. Mizutani, Hidefumi Yoshimura, Takaaki Kawahara, S. Sakashita, Masahiro Yoneda, Junichi Tsuchimoto, Naofumi Murata
Publikováno v:
Japanese Journal of Applied Physics. 46:1859-1864
We have investigated a polycrystalline silicon (poly-Si)/chemical vapor deposited titanium nitride (CVD-TiN) stacked structure as a metal gate with a high-k for p-type metal insulator semiconductor field effect transistors (p-MISFETs). A divided-CVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461373b80b22fdcacf79edca850dfe2c
https://doi.org/10.1143/jjap.46.1859
https://doi.org/10.1143/jjap.46.1859
Autor:
Kazuyoshi Torii, Atsushi Horiuchi, Riichirou Mitsuhashi, Hitoshi Takada, Hiroshi Ohji, Masashi Takahashi, Takaaki Kawahara
Publikováno v:
Hyomen Kagaku. 26:261-267
The reaction behavior of the Interfacial Layer (IL) in an HfAlOx/SiO2 and SiON structure during a post deposition annealing (PDA) in an N2-diluted oxygen ambient was examined. After a PDA at 1,050oC for 1 s, the 0.7 nm-thick IL was reduced if the O2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe386a5a4a2aacc47ad6c9a010deba10
https://doi.org/10.1380/jsssj.26.261
https://doi.org/10.1380/jsssj.26.261
Autor:
Riichirou Mitsuhashi, Hiroshi Kitajima, Hiroyuki Ito, Woo Sik Kim, Takaaki Kawahara, Hiroshi Ohji, Kazuyoshi Torii, Akiyoshi Muto
Publikováno v:
Japanese Journal of Applied Physics. 43:7884-7889
The effects of introducing NH3/Ar plasma pulses during the atomic layer deposition (ALD) of HfAlOx films and during the in situ nitridation of an interfacial layer (IL) on the properties of HfAlOx-FETs were investigated. The interaction between HfAlO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f679a5d01ec8aa103ad24170bebbe3
https://doi.org/10.1143/jjap.43.7884
https://doi.org/10.1143/jjap.43.7884
Publikováno v:
Electrical Engineering in Japan. 125:47-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcce4ad2957f606147ec631058fd773
https://doi.org/10.1002/(sici)1520-6416(199810)125:1<47::aid-eej6>3.0.co
https://doi.org/10.1002/(sici)1520-6416(199810)125:1<47::aid-eej6>3.0.co
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 117:220-226
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cc9dde0eb0d59d918dcb1b7653e7d39
https://doi.org/10.1541/ieejeiss1987.117.3_220
https://doi.org/10.1541/ieejeiss1987.117.3_220
Autor:
Takaaki Kawahara
Publikováno v:
Journal of the Surface Finishing Society of Japan. 48:1054-1058
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab33f611bc764d4f48167c57aedf0da1
https://doi.org/10.4139/sfj.48.1054
https://doi.org/10.4139/sfj.48.1054
Autor:
Kenichiro Sakamoto, Takaaki Kawahara, Koichiro Tsutahara, Toshinobu Banjou, Akimasa Yuuki, Toru Yamaguchi
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 20:489-496
SiH4/O2常圧CVDの成膜機構ならびに副生物である微粒子の運動について検討し, これらを制御することにより, 面内均一性ならびにメンテナンス特性に優れた枚葉型常圧CVD装置を開発した.ま
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3deed809c1ee56a6d8daeacd0d6a65
https://doi.org/10.1252/kakoronbunshu.20.489
https://doi.org/10.1252/kakoronbunshu.20.489
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 20:610-617
TEOSとO3を用いた常圧CVD装置では白粉が生じ易く, 排気パイプの閉塞やウエハ上の異物付着が実用上大きな問題になる.そこで本報では, 円筒型シャワーヘッドを同心円状の内外二重チャン
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf3825fc9a175b6517b4c44e328f88f
https://doi.org/10.1252/kakoronbunshu.20.610
https://doi.org/10.1252/kakoronbunshu.20.610
Autor:
Jiro Yugami, Masaru Kadoshima, Hiroshi Umeda, S. Yamanari, M. Mizutani, Y. Takeshima, S. Sakashita, Takaaki Kawahara, Y. Okuno, Y. Satoh, Akihiro Shimizu, S. Matsuyama, Hidefumi Yoshimura, Masao Inoue, Hiroshi Miyatake, Y. Nishida, R. Mitsuhashi, A. Tsudumitani, M. Anma
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db8d0ea2f8de0931eaa992f488bafff
https://doi.org/10.7567/ssdm.2009.b-4-2
https://doi.org/10.7567/ssdm.2009.b-4-2