Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Takaaki Agui"'
Publikováno v:
IEEE Journal of Photovoltaics. 9:666-672
In this paper, lattice-matched GaInP/GaAs/GaInNAsSb 3-junction (3J) solar cells were fabricated using a hybrid growth technique consisting of metalorganic chemical vapor deposition (MOCVD) for the upper two subcells and molecular beam epitaxy (MBE) f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7564e9cbf54d9b4daa0ae32a10dc3a1
https://doi.org/10.1109/jphotov.2019.2895807
https://doi.org/10.1109/jphotov.2019.2895807
Autor:
Yilun He, Yoshitaka Okada, Tatsuya Takamoto, Hiroyuki Juso, Nazmul Ahsan, Takaaki Agui, Naoya Miyashita
Publikováno v:
Solar Energy Materials and Solar Cells. 185:359-363
In this work, lattice-matched 3-junction and 4-junction solar cells including the dilute nitride subcells were fabricated by a hybrid growth technique of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). It was found th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34d4de46bede60fc1af188fc0494374
https://doi.org/10.1016/j.solmat.2018.05.043
https://doi.org/10.1016/j.solmat.2018.05.043
Autor:
Masakazu Sugiyama, Takaaki Agui, David Lackner, Hiroyuki Juso, Kentaroh Watanabe, Ryusuke Onitsuka, Tatsuya Takamoto, Andreas W. Bett, Frank Dimroth, Yoshiaki Nakano, Hiromasa Fujii, Hassanet Sodabanlu
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
A strain-compensated InGaAs/GaAsP superlattice (SL) was successfully integrated into the GaAs middle cell of a lattice-matched InGaP/GaAs/Ge triple junction (3J) solar cell. Wafer shuttle technology was employed for proof of concept because the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe8fa5a83a5f5319c4b0348a6d66098
https://doi.org/10.1109/pvsc.2015.7356073
https://doi.org/10.1109/pvsc.2015.7356073
Autor:
Tatsuya Takamoto, Kensuke Nishioka, Yukiharu Uraoka, Takashi Fuyuki, M. Kaneiwa, Takaaki Agui
Publikováno v:
Solar Energy Materials and Solar Cells. 90:57-67
The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency ( η ) decreased with increasing temperature, and increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5eb27cabe11d7d114c2502b26a31402
https://doi.org/10.1016/j.solmat.2005.01.011
https://doi.org/10.1016/j.solmat.2005.01.011
Autor:
Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, M. Kaneiwa, Yukiharu Uraoka, Takashi Fuyuki
Publikováno v:
Solar Energy Materials and Solar Cells. 90(9):1308-1321
The series resistance of an InGaP/InGaAs/Ge triple-junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel junction resistance and lateral resistance between electrodes were estimated separately.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a131a22b049e9992e10900bd87a8422
http://hdl.handle.net/10119/3392
http://hdl.handle.net/10119/3392
Autor:
M. Kaneiwa, Takaaki Agui, Tatsuya Takamoto, Yukiharu Uraoka, Takashi Fuyuki, Kensuke Nishioka
Publikováno v:
Solar Energy Materials and Solar Cells. 85:429-436
Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca91a2762a55a17f82ed9466d4c0c4fa
https://doi.org/10.1016/j.solmat.2004.05.008
https://doi.org/10.1016/j.solmat.2004.05.008
Autor:
Masashi Morimoto, Takaaki Agui, Tatsuya Takamoto, Hiroyuki Juso, Naoteru Shigekawa, Ryusuke Onitsuka, Li Chai, Jianbo Liang
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
A hybrid triple-junction cell was fabricated by surface activated bonding of a lattice-matched invertedly-grown InGaP/GaAs double-junction cell to an ion-implantation-based Si bottom cell. An n+-doped layer on the top of bottom cell due to the ion im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc85f6b4b1638a456510b8107c41edb
https://doi.org/10.1109/pvsc.2014.6924976
https://doi.org/10.1109/pvsc.2014.6924976
Publikováno v:
Solar Energy Materials and Solar Cells. 66:511-516
Conversion efficiency (AM1.5G) of more than 30% was achieved by adding a small quantity of Indium into a GaAs bottom cell in the conventional tandem solar cell on Ge substrate. It was found that the lattice-mismatch between GaAs and Ge caused misfit-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc24c02060faadf947a80291db545ca
https://doi.org/10.1016/s0927-0248(00)00213-0
https://doi.org/10.1016/s0927-0248(00)00213-0
Autor:
Takaaki Agui, Ken Takahashi, Tsunehiro Unno, Kenji Araki, Hiroshi Kurita, Eiji Ikeda, Masafumi Yamaguchi, Tatsuya Takamoto
Publikováno v:
Solar Energy Materials and Solar Cells. 66:559-565
GaAs-based cells, including GaAs single-junction cells, AlGaAs/GaAs two-junction cells, and InGaP/GaAs two-junction cells grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) are examined in various levels of concentration and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3967eb3285d4fd7c8fb5e080a12688
https://doi.org/10.1016/s0927-0248(00)00238-5
https://doi.org/10.1016/s0927-0248(00)00238-5
Autor:
Masafumi Yumaguchi, Hiroshi Kurita, Mowafak Al-Jassim, Eiji Ikeda, Tatsuya Takamoto, Takaaki Agui
Publikováno v:
Journal of Applied Physics. 85:1481-1486
Diffusion of impurities (Zn and Si) from a tunnel junction during epitaxial growth and the effects of impurity diffusion on InGaP/GaAs tandem cell properties have been investigated. Zn diffusion from the tunnel junction has been found to deteriorate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df6bd4d197b92c11a8056fec31b1529f
https://doi.org/10.1063/1.369278
https://doi.org/10.1063/1.369278