Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Taizo Nakasu"'
Publikováno v:
Journal of Electronic Materials. 46:2248-2253
ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) w
Publikováno v:
physica status solidi (b). 253:2265-2269
ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE).
Autor:
Fukino Kazami, Sotaro Yamashita, Wei Che Sun, Takayuki Aiba, Yuki Hashimoto, Toshiaki Asahi, Kosuke Taguri, Takeru Kizu, Shun Ozaki, Shota Hattori, Taizo Nakasu, Masakazu Kobayashi
Publikováno v:
Journal of Electronic Materials. 45:4742-4746
Zinc telluride (ZnTe) epilayers were grown on S-plane (\(10\bar{1}1\)) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-pl
Autor:
Sotaro Yamashita, Masakazu Kobayashi, Toshiaki Asahi, Taizo Nakasu, Wei Che Sun, Takayuki Aiba, Shota Hattori, Fukino Kazami, Takeru Kizu, Kosuke Taguri
Publikováno v:
physica status solidi (b). 253:635-639
ZnMgTe/ZnTe waveguide is a high potential electro-optical device. Thick and high Mg composition cladding layers are required for high optical performance waveguides. However, adding Mg would increase the lattice mismatch between ZnMgTe and ZnTe which
Autor:
Takeru Kizu, Wei Che Sun, Takayuki Aiba, Toshiaki Asahi, Fukino Kazami, Shota Hattori, Kosuke Taguri, Sotaro Yamashita, Yuki Hashimoto, Taizo Nakasu, Shun Ozaki, Masakazu Kobayashi
Publikováno v:
Journal of Electronic Materials. 45:2127-2132
ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the cry
Autor:
Jing Wang, Masakazu Kobayashi, Yuki Hashimoto, Fukino Kazami, Toshiaki Asahi, Takeru Kizu, Wei Che Sun, Shota Hattori, Taizo Nakasu
Publikováno v:
MRS Advances. 1:1721-1727
ZnMgTe(Cladding)/ZnTe(Core)/ZnMgTe(Cladding) thin film waveguide had been grown by molecular beam epitaxy (MBE) and presented a great potential to be a high performance Electro-optical (EO) modulator. For a low propagation loss ZnMgTe/ZnTe waveguide,
Autor:
Taizo Nakasu, Fukino Kazami, Masakazu Kobayashi, Shota Hattori, Wei Che Sun, Toshiaki Asahi, Takeru Kizu, Yuki Hashimoto
Publikováno v:
physica status solidi c. 13:435-438
ZnTe epilayers were grown on R -plane () and S -plane () sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using
Publikováno v:
Journal of Crystal Growth. 468:635-637
Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was
Autor:
Toshiaki Asahi, Shota Hattori, Wei-Che Sun, Taizo Nakasu, Takayuki Aiba, Fukino Kazami, Kosuke Taguri, Masakazu Kobayashi, Sotaro Yamashita
Publikováno v:
Journal of Crystal Growth. 425:191-194
ZnTe epilayers were grown on transparent a -plane (11–20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a low-temperature nucleated buffer layer was carried out, and the influence of the buffer layer annealing prior to the f
Autor:
Kosuke Taguri, Hiroyoshi Togo, Toshiaki Asahi, Wei Che Sun, Takayuki Aiba, Taizo Nakasu, Sotaro Yamashita, Masakazu Kobayashi
Publikováno v:
physica status solidi c. 11:1182-1185
ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -pl