Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Taizo Hoshino"'
Autor:
Yukihiro Furukawa, Kazuhiko Omote, Yoshinori Ueji, Atsushi Tanaka, Hirotaka Yamaguchi, Masatoshi Tsujimura, Kenji Fukuda, Naoyuki Kawabata, Hirofumi Matsuhata, Taizo Hoshino
Publikováno v:
Materials Science Forum. :315-318
In this study, we investigated the annealing temperature dependence of dislocation extension in an ion-implanted region of a 4H-silicon carbide (SiC) C-face epitaxial layer, revealing that a high temperature annealing led to dislocation formation. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886af7647d4d84be747ef82a9de8ff5c
https://doi.org/10.4028/www.scientific.net/msf.821-823.315
https://doi.org/10.4028/www.scientific.net/msf.821-823.315
Autor:
Wataru Ohashi, Hirokatsu Yashiro, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Taizo Hoshino, Hiroshi Tsuge, S. Satoh, Hosei Hirano, Masashi Nakabayashi
Publikováno v:
Materials Science Forum. :319-322
Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d7e5786966ae766b07a69320eab1da
https://doi.org/10.4028/www.scientific.net/msf.645-648.319
https://doi.org/10.4028/www.scientific.net/msf.645-648.319
Autor:
Tatsuo Fujimoto, Wataru Ohashi, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, Masakazu Katsuno, Masashi Nakabayashi, Hosei Hirano, Taizo Hoshino, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. :311-314
Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bc60a129f5e6fc99e1da33f86d2467
https://doi.org/10.4028/www.scientific.net/msf.645-648.311
https://doi.org/10.4028/www.scientific.net/msf.645-648.311
Autor:
Taizo Hoshino, Tatsuo Fujimoto, Hirokatsu Yashiro, Wataru Ohashi, Takashi Aigo, Masakazu Katsuno, Masashi Nakabayashi, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. :119-122
The epitaxial growth process was optimized in order to obtain good surface morphology for epilayers grown on 4˚ off-axis substrates. The optimization was carried out from growth temperatures and gas chemistry including C/Si ratio. Step-bunching was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da811e4c80d65f1f3021ebdbb31ab10
https://doi.org/10.4028/www.scientific.net/msf.645-648.119
https://doi.org/10.4028/www.scientific.net/msf.645-648.119
Autor:
Tatsuo Fujimoto, Hiroshi Tsuge, Kohei Tatsumi, Noboru Ohtani, Hosei Hirano, Takashi Aigo, Taizo Hoshino, Hirokatsu Yashiro, Masakazu Katsuno, Masashi Nakabayashi
Publikováno v:
Journal of Crystal Growth. 311:1475-1481
Heavily nitrogen-doped n + 4H–SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f14ce26aef43b729f2bbd8bb8d170d
https://doi.org/10.1016/j.jcrysgro.2009.01.119
https://doi.org/10.1016/j.jcrysgro.2009.01.119
Autor:
Hirokatsu Yashiro, Masakazu Katsuno, Taizo Hoshino, Hiroshi Tsuge, Tatsuo Fujimoto, Noboru Ohtani, Takashi Aigo, Kohei Tatsumi, Masashi Nakabayashi
Publikováno v:
Materials Science Forum. :341-344
The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6588b541c7f161c02445b1ffec15d6d
https://doi.org/10.4028/www.scientific.net/msf.600-603.341
https://doi.org/10.4028/www.scientific.net/msf.600-603.341
Autor:
Hirokatsu Yashiro, Taizo Hoshino, Kohei Tatsumi, Masashi Nakabayashi, Tatsuo Fujimoto, Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Hosei Hirano, Takashi Aigo
Publikováno v:
Materials Science Forum. :3-6
The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2ead69313ef8a5b3697feafce69c68
https://doi.org/10.4028/www.scientific.net/msf.600-603.3
https://doi.org/10.4028/www.scientific.net/msf.600-603.3
Autor:
Masashi Nakabayashi, Masakazu Katsuno, Hiroshi Tsuge, Hirokatsu Yashiro, Kohei Tatsumi, Hosei Hirano, Tatsuo Fujimoto, Noboru Ohtani, Takashi Aigo, Taizo Hoshino
Publikováno v:
Materials Science Forum. :819-822
The development of lapping and polishing technologies for SiC single crystal wafers has realized the fabrication of an extremely flat SiC wafer with excellent surface quality. To improve the SiC wafer flatness, we developed a four-step lapping proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd4d9cd8ed487035b47b9db67850ddc
https://doi.org/10.4028/www.scientific.net/msf.600-603.819
https://doi.org/10.4028/www.scientific.net/msf.600-603.819
Autor:
Tatsuo Fujimoto, Noboru Ohtani, Masakazu Katsuno, Hirokatsu Yashiro, Takashi Aigo, Masashi Nakabayashi, Mitsuru Sawamura, Hiroshi Tsuge, Taizo Hoshino
Publikováno v:
Materials Science Forum. :153-158
4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by a low-pressure hot-wall type chemical vapor deposition system. The C-face substrates were prepared by fine mechanical polishing using diamond abrasives with the grit size of 0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62968ea5f24d732640405bb2f07d1085
https://doi.org/10.4028/www.scientific.net/msf.527-529.153
https://doi.org/10.4028/www.scientific.net/msf.527-529.153
Autor:
Hirokatsu Yashiro, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, Masashi Nakabayashi, Tatsuo Fujimoto, Noboru Ohtani, Mitsuru Sawamura, Taizo Hoshino
Publikováno v:
Japanese Journal of Applied Physics. 45:1738-1742
The behavior of basal plane dislocations in hexagonal silicon carbide (SiC) single crystals grown by physical vapor transport (PVT) was investigated by defect selective etching and transmission electron microscopy (TEM). Oval-shaped etch pits on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf178c7669a59f9d50051c3e5cc7977
https://doi.org/10.1143/jjap.45.1738
https://doi.org/10.1143/jjap.45.1738