Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Taishi Kubota"'
Autor:
T. Asahi, Allam Ayman, Manabu Fujii, Xinyu Guo, Takeshi Hidaka, Naoki Hirose, K. Ichimi, Hiroaki Ito, Masashi Ito, T. Kasamo, Haejin Kim, Teruhisa Komatsu, Taishi Kubota, T. Mano, Keito Mineo, Shigeru Montani, Akihiko Morimoto, Hiroki Murata, Kenichi Nakagami, Yuki Nakano, Masafumi Natsuike, Wataru Nishijima, Osamu Nishimura, N. Obata, Takahiro Ota, Yoshitaka Ota, Yoichi Sakai, Takashi Sakamaki, Shingo X. Sakamoto, Katazakai Saki, Ryo Sakurai, Shuji Sasa, Shuhei Sawayama, Satoquo Seino, Hotaka Seko, Ryota Shibano, J. Shibata, Wilf Swartz, Kuninao Tada, Katsuki Takao, Katsumi Takayama, Tetsutaro Takikawa, Takeshi Tomiyama, Takuro Uehara, Yucheng Wang, H. Yamamoto, Tetsuo Yanagi, Hajimu Yatabe, Naoya Yokoji, Takafumi Yoshida, Naoki Yoshie, Chihiro Yoshimura, T. Yoshioka, Jing Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f3a97cb388139e5056925a0a3d6ac0
https://doi.org/10.1016/b978-0-12-813060-5.09992-2
https://doi.org/10.1016/b978-0-12-813060-5.09992-2
Publikováno v:
Progress in Oceanography. 179:102204
The snow crab Chionoecetes opilio is an important fishery species in Japan. Hydrodynamics are vital to the distribution, recruitment and settlement of crab larvae in nursery areas. In this study, we developed a survival and transport model of snow cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb4182bce1f34fd335e6770ddcc4fef
https://doi.org/10.1016/j.pocean.2019.102204
https://doi.org/10.1016/j.pocean.2019.102204
Publikováno v:
Applied Surface Science. :253-258
The influence of phosphorus at the floating gate (FG)/tunnel oxide interface on the FLASH memory data retention characteristics is investigated. By measuring the electrical characteristics of memory cells and MOS capacitors, a close relationship was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8b3aa55425c7f261f983c470ec6d3d
https://doi.org/10.1016/s0169-4332(97)80090-6
https://doi.org/10.1016/s0169-4332(97)80090-6
Publikováno v:
Journal of The Electrochemical Society. 140:770-773
Ultrathin dielectric films play an important role in Integrated Circuits (ICs), both as gate dielectrics for MOS technologies, and as tunnel dielectrics for erasable memory (e.g. EEPROM) technologies. Therefore, significant effort has been directed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a4848948d1fce12ae88b2acdf01a50
https://doi.org/10.1149/1.2056156
https://doi.org/10.1149/1.2056156
Autor:
Kohji Kanamori, Akihiko Ishitani, Takeshi Okazawa, Y. Suzuki, M. Tsukiji, E. Hasegawa, Yosiaki S. Hisamune, Taishi Kubota
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
A novel contactless cell with high capacitive-coupling ratio (HiCR) of 0.8, which is programmed and erased by Fowler-Nordheim tunneling, has been developed for 3 V-only 64 Mbit and future flash memories. A 1.50 /spl mu/m/sup 2/ cell area is obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161a333c7c0801f3040299b722a3502b
https://doi.org/10.1109/iedm.1993.347408
https://doi.org/10.1109/iedm.1993.347408
Autor:
N. Nishio, N. Kodama, M. Matsuo, Mitsuhiro Horikawa, Shuichi Saito, Taishi Kubota, Takeshi Okazawa, Satoru Muramatsu, K. Arai, H. Shirai
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
Clear evidence is presented that the floating gate poly-Si grain size dominates flash memory erase characteristics. Smaller grain size shows a narrower erase distribution. Thus conventional scaling theories should be modified to include that grain si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b918d2127ac92becd224ec521ec72b97
https://doi.org/10.1109/iedm.1994.383280
https://doi.org/10.1109/iedm.1994.383280
Publikováno v:
Proceedings of International Electron Devices Meeting.
A 0.54 /spl mu/m/sup 2/ self-aligned memory cell with hemispherical-grained (HSG) poly-Si floating gate (SAHF cell) has been developed for 256 Mbit flash memories. Applying hemispherical-grained (HSG) poly-Si to floating gate extends the upper surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fb5af85109f37f06a56ca1cea1cedf
https://doi.org/10.1109/iedm.1995.499304
https://doi.org/10.1109/iedm.1995.499304
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::062e9f02ea2945dbd9f0fda1a08626d1
https://doi.org/10.7567/ssdm.1993.s-iii-4
https://doi.org/10.7567/ssdm.1993.s-iii-4
Publikováno v:
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 ISBN: 9781489915900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0ab3c645e7e19764ddc4752b73a810
https://doi.org/10.1007/978-1-4899-1588-7_49
https://doi.org/10.1007/978-1-4899-1588-7_49
Publikováno v:
Japanese Journal of Applied Physics. 24:L481
Remarkably enhanced resonant microwave transmissions have been found to take place in Fe78Si10B12 and Fe4.7Co70.3Si10B15 metal-metalloid foils corresponding to the FMR absorption at room temperature. The resonant transmission which takes place in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c56218ea3a52e893dcbb614a934426
https://doi.org/10.1143/jjap.24.l481
https://doi.org/10.1143/jjap.24.l481