Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Taishi FURUKAWA"'
Publikováno v:
Journal of Structural and Construction Engineering (Transactions of AIJ). 88:567-576
Autor:
Taishi Furukawa, Yasuhiro Mori
Publikováno v:
Journal of Structural and Construction Engineering (Transactions of AIJ). 85:869-878
Autor:
Taishi Furukawa, Yasuhiro Mori
Publikováno v:
Journal of Structural and Construction Engineering (Transactions of AIJ). 84:1315-1323
Publikováno v:
Journal of Structural and Construction Engineering (Transactions of AIJ). 82:1589-1599
Autor:
Yasuhiro Mori, Taishi Furukawa
Publikováno v:
Structural Safety. 89:102040
The objectives of this study is to develop a framework for estimating the exceedance probability p ex of the maximum inter-story drift ratio (ISDR) at each story of an SMRF based on the previously proposed techniques for predicting the responses for
Autor:
Noriaki Oshima, Toshiki Yamamoto, Hirokazu Chiba, Taishi Furukawa, Ken-ichi Tada, Tadahiro Yotsuya, Hiroshi Funakubo
Publikováno v:
Journal of the Ceramic Society of Japan. 124:510-514
Autor:
Koichi Fujimoto, Toshiki Yamamoto, Kenichi Tada, Taishi Furukawa, Tadahiro Yotsuya, Takao Suzuki, Koichiro Inaba, Noriaki Oshima, Tetsu Yamakawa, Hirokazu Chiba, Hiroshi Funakubo
Publikováno v:
ECS Transactions. 16:243-251
Novel Ta and Nb compounds Ta(NtBu)(OtBu)3 (1) and Nb(NtBu)(OtBu)3 (2) were prepared as volatile liquid precursors for the MOCVD process. Ta2O5 and Nb2O5 films were obtained by using 1 and 2 in a lower temperature regime than pentaethoxy tantalum (PET
Autor:
Naoya Iwamoto, Noriaki Oshima, Masaru Shimizu, Taishi Furukawa, Kazuhisa Kawano, S. Watari, Hironori Fujisawa
Publikováno v:
Japanese Journal of Applied Physics. 45:7354-7359
Ir-based electrodes were fabricated by metal organic chemical vapor deposition (MOCVD) using a newly developed liquid precursor, (ethylcyclopentadienyl)bis(ethylene) iridium [Ir(EtCp)(C2H4)2], with a lower decomposition temperature than previous prec
Autor:
Hiroyuki Oike, Hirokazu Chiba, Taishi Furukawa, Atsushi Maniwa, Ken-ichi Tada, Kazuhisa Kawano, Koiso Naoyuki
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:01A133
The authors have succeeded in development of a novel Ru precursor, Ru(EtCp)(η5-CH2C(Me)CHC(Me)O) [Rudense], for CVD and atomic layer deposition (ALD) processes under nonoxidative condition. Rudense has sufficient vapor pressure and good thermal stab
Publikováno v:
MRS Proceedings. 914
A novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precurso