Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Taisei YAMAZAKI"'
Publikováno v:
Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering ISBN: 9783030948214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45de9c1d6e286a9f324cf9a0689dc5e9
https://doi.org/10.1007/978-3-030-94822-1_42
https://doi.org/10.1007/978-3-030-94822-1_42
Autor:
Naoki SOTA, Ryoji IMAI, Aoki ANADA, Taisei YAMAZAKI, Masaharu UCHIUMI, Daisuke NAKATA, Ryojiro MINATO
Publikováno v:
International Journal of Microgravity Science & Application; 2022, Vol. 39 Issue 1, p1-10, 10p
Autor:
Joel T. Asubar, Masaaki Kuzuhara, Hirokuni Tokuda, Taisei Yamazaki, R. Yamaguchi, Takashi Nishitani
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We fabricated AlGaN/GaN MOS-HEMTs with a dual-field-plate (FP), composed of gate-FP and source-FP. Using pulsed I-V technique, the effect of FP on current collapse was studied. Applying a high positive gate voltage resulted in current collapse suppre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896a68d54f7c0179971bbf0121522ee1
https://doi.org/10.1109/imfedk.2018.8581959
https://doi.org/10.1109/imfedk.2018.8581959
Autor:
Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Masaaki Kuzuhara, Shinya Makino, Hirokuni Tokuda
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
In this work, we investigated the effect of shape irregularities of drain electrode on the breakdown voltage of AlGaN/GaN HEMTs. We found that some random devices having rough metal edge definition tend to have lower breakdown voltages. In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032be27e0213efec3ef28bed087a6c5b
https://doi.org/10.1109/iciprm.2016.7528767
https://doi.org/10.1109/iciprm.2016.7528767
Publikováno v:
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f1381a0e406284d19618150cf8081c
https://doi.org/10.1109/imfedk.2016.7521699
https://doi.org/10.1109/imfedk.2016.7521699
Publikováno v:
Applied Physics Express. 11:054102
We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58004746dc82f1f45398112687ef2ce3
https://doi.org/10.7567/apex.11.054102
https://doi.org/10.7567/apex.11.054102
Publikováno v:
Applied Physics Express. 11:024101
We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electrolumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03667ac0170fc9320a8bf3caa1662c2b
https://doi.org/10.7567/apex.11.024101
https://doi.org/10.7567/apex.11.024101
Publikováno v:
Applied Physics Express; Feb2018, Vol. 11 Issue 2, p1-1, 1p