Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Taikyu Kim"'
Autor:
Joo Hee Jeong, Seung Wan Seo, Dongseon Kim, Seong Hun Yoon, Seung Hee Lee, Bong Jin Kuh, Taikyu Kim, Jae Kyeong Jeong
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Oxide semiconductors have gained significant attention in electronic device industry due to their high potential for emerging thin-film transistor (TFT) applications. However, electrical contact properties such as specific contact resistivit
Externí odkaz:
https://doaj.org/article/b21fa79d06114a5982824e9f1f4feec3
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a double-gate (DG) structure was developed using an atomic layer deposition route. The device consisting of 10-nm-thick IGO channel and 2/48-nm-thick
Externí odkaz:
https://doaj.org/article/5a0e3fd054084a92b5d30ae391703771
Autor:
Taikyu Kim, Cheol Hee Choi, Pilgyu Byeon, Miso Lee, Aeran Song, Kwun-Bum Chung, Seungwu Han, Sung-Yoon Chung, Kwon-Shik Park, Jae Kyeong Jeong
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable
Externí odkaz:
https://doaj.org/article/a4f9b25abff5445eaa93da8dcbffa308
Publikováno v:
IEEE Transactions on Electron Devices. 70:2317-2323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839187dcee36ff7c33dc6a1eb2bcec60
https://doi.org/10.1109/ted.2023.3261281
https://doi.org/10.1109/ted.2023.3261281
Publikováno v:
ACS Applied Materials & Interfaces. 15:19137-19151
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24047777e615470cdc9e90485522a46
https://doi.org/10.1021/acsami.3c00038
https://doi.org/10.1021/acsami.3c00038
Autor:
Taikyu Kim, Cheol Hee Choi, Se Eun Kim, Jeong-Kyu Kim, Jaeman Jang, SeungChan Choi, Jiyong Noh, Kwon-Shik Park, Jeomjae Kim, SooYoung Yoon, Jae Kyeong Jeong
Publikováno v:
IEEE Electron Device Letters. 44:269-272
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe17fc649bfefa746276e7428e2ac504
https://doi.org/10.1109/led.2022.3230705
https://doi.org/10.1109/led.2022.3230705
Autor:
Hongwei Xu, Hee Sung Han, Jae Seok Hur, Min Jae Kim, Cheol Hee Choi, Taikyu Kim, Joon-Hyuk Chang, Jae Kyeong Jeong
Publikováno v:
Journal of Materials Chemistry C. 11:1569-1578
Broadband phototransistors have attracted considerable attention for numerous applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543a234db9b54b49a753d4672543ac10
https://doi.org/10.1039/d2tc04056e
https://doi.org/10.1039/d2tc04056e
Autor:
Jeonga Lee, Cheol Hee Choi, Taikyu Kim, Jaeseok Hur, Min Jae Kim, Eun Hyun Kim, Jun Hyung Lim, Youngho Kang, Jae Kyeong Jeong
Publikováno v:
ACS Applied Materials & Interfaces. 14:57016-57027
This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::248079bef40ffdab0a435c19428e051d
https://doi.org/10.1021/acsami.2c18094
https://doi.org/10.1021/acsami.2c18094
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1153-1156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc15e4b2b340532191fda45552a89ce
https://doi.org/10.1002/sdtp.15706
https://doi.org/10.1002/sdtp.15706
Publikováno v:
Ceramics International. 48:12806-12812
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3adbb1cbe40318f918f65bf3eb4e34f
https://doi.org/10.1016/j.ceramint.2022.01.151
https://doi.org/10.1016/j.ceramint.2022.01.151