Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Taiheui Cho"'
Publikováno v:
ECS Transactions. 61:151-157
Surface nitridation has long been desirable for surface and interface passivation to realize ultra-low equivalent oxide thickness (EOT) dielectric layers on Si and III-V materials. Various nitridation techniques exist, including thermal and plasma ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14219b586ff235d8b935a375781e166d
https://doi.org/10.1149/06102.0151ecst
https://doi.org/10.1149/06102.0151ecst
Publikováno v:
Annual Review of Materials Science. 30:645-680
▪ Abstract As integrated circuit (IC) dimensions continue to decrease, RC delay, crosstalk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Materials with l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5bab0acf3f8b96a9b1d392f9045e66
https://doi.org/10.1146/annurev.matsci.30.1.645
https://doi.org/10.1146/annurev.matsci.30.1.645
Publikováno v:
JOM. 51:37-40
Materials with low dielectric constants are being developed to replace silicon dioxide as interlevel dielectrics. This paper discusses material issues and the characterization of low-k materials for integration into advanced interconnects. Measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::928a485ff9a571e41133b0b4eab8346d
https://doi.org/10.1007/s11837-999-0158-8
https://doi.org/10.1007/s11837-999-0158-8
Publikováno v:
MRS Proceedings. 565
In recent years there have been widespread efforts to identify low dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices. This has led to extensive efforts to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf5d21a4fc6dc80fce8d4bf2eca34d7c
https://doi.org/10.1557/proc-565-69
https://doi.org/10.1557/proc-565-69
Publikováno v:
MRS Proceedings. 511
Dielectric anisotropy was studied using two fluorinated polymers(fluorinated polyirnide and fluorinated poly(aryl ether)), which are promising candidate as interlayer dielectrics(LLD). From the measurement of the optical anisotropy, the fluorinated p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9521de4b2df7121eee5fcd71f68a0964
https://doi.org/10.1557/proc-511-145
https://doi.org/10.1557/proc-511-145
Publikováno v:
Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2b0ddd1be3e78adcf931ec1acc9dbb
https://doi.org/10.7567/ssdm.1998.a-6-6
https://doi.org/10.7567/ssdm.1998.a-6-6
Publikováno v:
MRS Proceedings. 476
New methodologies are being developed in our laboratory that allow measurements of the Young's modulus (E) and thermal expansion coefficient (TEC) for materials that cannot be prepared as free standing films. The first employs a bending beam measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac7851d86331bc5372bf58372b41215
https://doi.org/10.1557/proc-476-135
https://doi.org/10.1557/proc-476-135
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:208
Dielectric anisotropy of polymers with low dielectric constant is an important property to consider for developing interlevel dielectrics for advanced on-chip interconnects. The effect of molecular structure on dielectric anisotropy has been investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fbd77ad87840c86a24d6a3583a19b9b
https://doi.org/10.1116/1.591174
https://doi.org/10.1116/1.591174
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