Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Taichi Yabe"'
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Nobutaka Oi, Shoichiro Imanishi, Quang Ngoc Nguyen, Hiroshi Kawarada
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide ba
Externí odkaz:
https://doaj.org/article/3ea4eb941523412dbfdd0d4a207cc70a
Autor:
Taichi Yabe, Reem Mohammed Alhasani, Hiroshi Kawarada, Yutaro Iyama, Shoichiro Imanishi, Quang N. Nguyen, Nobutaka Oi
Publikováno v:
Scientific Reports. 12
Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68ca42796c123c6eb456ce3b6b6c692a
https://doi.org/10.1038/s41598-022-05180-4
https://doi.org/10.1038/s41598-022-05180-4
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Mohammed Alhasani, Quang N. Nguyen, Hiroshi Kawarada
Publikováno v:
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b327bd795cfaaecf56d5eac1a8302a
https://doi.org/10.1109/nmdc50713.2021.9677505
https://doi.org/10.1109/nmdc50713.2021.9677505