Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Taichi OKANO"'
Autor:
Ryuto Maeda, Hidetomo Kobayashi, Mami Higashidani, Tetsuaki Matsuhisa, Akihiro Sawa, Katsushi Miyake, Yoshitaka Tayama, Kouji Kimura, Hiroyuki Itoh, Taichi Okano, Soshi Seike, Hiroyasu Yamanaka
Publikováno v:
Access Microbiology. 4
Introduction. Methicillin-resistant Staphylococcus aureus (MRSA) is one of the major pathogens of nosocomial infections throughout the world. In the medical field, it is extremely important to this pathogen’s trends when considering infection contr
Autor:
Ryuto, Maeda, Hidetomo, Kobayashi, Mami, Higashidani, Tetsuaki, Matsuhisa, Akihiro, Sawa, Katsushi, Miyake, Yoshitaka, Tayama, Kouji, Kimura, Hiroyuki, Itoh, Taichi, Okano, Soshi, Seike, Hiroyasu, Yamanaka
Publikováno v:
Access microbiology. 4(2)
Methicillin-resistantWe hypothesized that clarifying the characteristics of clinically isolated MRSA would contribute to infection control and proper use of antimicrobial agents against MRSA.The purpose of this study is to elucidate the genetic and b
Publikováno v:
Synlett. 30:1048-1052
A nickel-catalyzed β-selective hydrocarboxylation of ynamides to give protected dehydro-β-amino acids was developed. The key to exclusive β-selectivity was the use of diethylzinc as a reductant in the presence of a magnesium salt. The reaction was
Autor:
Yuji Osawa, Hiroshi Osawa, Taichi Okano, Michiya Odawara, Jun Norimatsu, Takayuki Sato, Akira Miyasaka, Daisuke Muto, Yutaka Tajima, Fukada Keisuke, Yoshiaki Kageshima, Kenji Momose
Publikováno v:
Materials Science Forum. :193-196
The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrat
Autor:
Yuji Osawa, Takayuki Sato, Daisuke Muto, Fukada Keisuke, Akira Miyasaka, Taichi Okano, Yutaka Tajima, Jun Norimatsu, Hiroshi Osawa, Kimura Yusuke, Kenji Momose, Michiya Odawara
Publikováno v:
Materials Science Forum. :197-200
The production of 150 mm-diameter SiC epi-wafers is the key to the spread of SiC power devices. Besides, step-bunching free surface leads to high-performance devices. We have developed the production technology of the epitaxial growth with smooth sur
Autor:
Yasuo OGASAHARA, Takayuki ARAKAWA, Masaaki IKEMOTO, Maiko OKADA, Taichi OKANO, Tomoyuki TAKEYMA, Kumiko DOI, Hidekazu FUJII, Shunji MATSUMOTO, Shunji MUKAIDA, Masako YASUHARA, Shinji YAMAGUCHI, Akiko YAMAMOTO, Akihiro SAWA, Shigeaki ARAI, Nobuhiro NAGASAKI, Tetusi NAKAMURA
Publikováno v:
Japanese Journal of Environmental Infections. 26:378-384
Publikováno v:
Journal of Materials Science. 27:4085-4088
High-T c superconducting Bi2Sr2CaCu2Ox films withT c off =80 K were prepared by the dipping method of sol-gel processing using inorganic salts. The influence of the preparation conditions on the superconducting properties of the derived material is r