Zobrazeno 1 - 10
of 167
pro vyhledávání: '"Tai-bor Wu"'
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
This paper presents a grid-connected bi-directional modular multilevel converter (MMC) with division-summation (D-Σ) digital control to achieve power injection and rectification functions. The D-Σ digital control is adopted to track current referen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2cc691fd80ac3a0c89a745c3f79518e
https://doi.org/10.1109/ifeec.2017.7992058
https://doi.org/10.1109/ifeec.2017.7992058
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
This study presents design of D-Σ digital controlled hybrid-frequency inverters with LCL filter for grid-connected applications. Hybrid-frequency inverters consist of inverters with different frequencies and power ratings connected in parallel. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe81e0d407ae9f933635f65564b9cac
https://doi.org/10.1109/ifeec.2017.7992149
https://doi.org/10.1109/ifeec.2017.7992149
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
This study investigates the cell voltages and arm currents in double-star modular multilevel converters (DSMMCs) based on power balance and current tracking control law. DSMMCs have been widely applied to static synchronous compensators, high-voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e380b67fb4ee9182aafd5e5512b1465
https://doi.org/10.1109/ifeec.2017.7992096
https://doi.org/10.1109/ifeec.2017.7992096
Publikováno v:
Journal of Applied Physics; 11/15/2005, Vol. 98 Issue 10, p104105, 7p, 1 Diagram, 2 Charts, 10 Graphs
Publikováno v:
Journal of Applied Physics; 7/1/2004, Vol. 96 Issue 1, p584-589, 6p, 1 Diagram, 1 Chart, 9 Graphs
Publikováno v:
Journal of the American Ceramic Society. Jun2001, Vol. 84 Issue 6, p1291. 5p. 9 Graphs.
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:Q47-Q51
Effect of annealing time on structure, composition and memory characteristics of self-assembled Pt nanocrystals from reduction of an embedded PtOx ultrathin film in metal-oxide-semiconductor (MOS) memory structures were investigated in this work. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95ca04e082fa5d8b396a0cd155eef0f
https://doi.org/10.1149/2.012203jss
https://doi.org/10.1149/2.012203jss
Autor:
Yen-De Chiang, Jr-Hau He, Cheng-Ying Chen, Tai-Bor Wu, Su-Jien Lin, Ching-Yuan Ho, Wen-Yuan Chang, Chih-Hsiang Ho
Publikováno v:
IEEE Transactions on Electron Devices. 58:1735-1740
Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb6293775f282ca01b34779931eaa65d
https://doi.org/10.1109/ted.2011.2121914
https://doi.org/10.1109/ted.2011.2121914
Autor:
Zi-Jay Lee, Chun-Heng Chen, Cheng-Hao Hou, Hung-Wen Chen, Huey-Liang Hwang, Shuang-Yuan Chen, Fu-Chien Chiu, Tai-Bor Wu, Heng-Sheng Huang, Chia-Hao Tu
Publikováno v:
ECS Transactions. 28:331-338
In this work, metal-oxide-semiconductor (MOS) capacitors incor-porating D2O-radical annealed atomic-layer-deposition (ALD) HfO2 gate dielectric were fabricated and investigated. The thermo-chemical breakdown model (E model) is used to analyze the TDD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c25e4f1b479cc69aecfe7bf77f898c67
https://doi.org/10.1149/1.3372587
https://doi.org/10.1149/1.3372587
Publikováno v:
Scripta Materialia. 59:897-900
(0 0 l)-oriented Pb(Zr0.5Ti0.5)O3/CoFe2O4 (PZT/CFO) multilayer thin films were fabricated with a change in stacking periodicity. When the periodicity increased, a size effect on both ferroelectric and ferromagnetic properties was observed. This resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c109f457cec9a88687557914a7c0e2
https://doi.org/10.1016/j.scriptamat.2008.06.045
https://doi.org/10.1016/j.scriptamat.2008.06.045