Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Tai-Jui Wang"'
Publikováno v:
2022 IEEE 22nd International Conference on Bioinformatics and Bioengineering (BIBE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b442b254f27ee0330ab1eb126d8cd1a
https://doi.org/10.1109/bibe55377.2022.00080
https://doi.org/10.1109/bibe55377.2022.00080
Autor:
Tai-Jui Wang
Publikováno v:
Research in Dance Education. 23:194-222
Chinese opera performance proceedings can be divided into two types. The first is ‘visible proceedings’, which can be directly seen and heard in the performance, and the second is ‘invisible procee...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92dd10eb683b5522818248b96b13e17f
https://doi.org/10.1080/14647893.2020.1812559
https://doi.org/10.1080/14647893.2020.1812559
Autor:
Ting-Chang Chang, Yu-An Chen, Shin-Ping Huang, Yang-Hao Hung, Pei-Jun Sun, Chia-Chuan Wu, Yu-Fa Tu, Wei-Han Chen, Yu-Xuan Wang, Ann-Kuo Chu, Tsung-Ming Tsai, Yu-Shan Shih, Tai-Jui Wang, Po-Hsun Chen, Yu-Hua Chung, Yu-Zhe Zheng
Publikováno v:
IEEE Electron Device Letters. 41:721-724
This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6eb00a50a70205cd663fb402556f59d
https://doi.org/10.1109/led.2020.2980123
https://doi.org/10.1109/led.2020.2980123
Autor:
Yu-Zhe Zheng, Terry Tai-Jui Wang, Po-Hsun Chen, Yu-Ching Tsao, Hong-Chih Chen, Ann-Kuo Chu, Wei-Han Chen, Shin-Ping Huang, Yu-Xuan Wang, Yu-Hua Chung, Chia-Chuan Wu, Shengdong Zhang, Yu-Shan Shih, Yao-Kai Shih, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 66:4764-4767
We investigate the abnormal current-voltage (C-V) hump effect of p-type low-temperature polysilicon (LTPS) thin-film transistors (TFTs) which have undergone high current operations. Experimental results indicate localized electron trapping in the gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3459b7728d95a3722fb7fe5b6c1be09e
https://doi.org/10.1109/ted.2019.2942149
https://doi.org/10.1109/ted.2019.2942149
Publikováno v:
Science Journal of Public Health. 10:43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e809c2f4c09cebc5e51715f8be8608
https://doi.org/10.11648/j.sjph.20221001.16
https://doi.org/10.11648/j.sjph.20221001.16
Autor:
Jia-Chong Ho, Glory Chen, Chen-Chu Tsai, Yung-Hui Yeh, Chen Wei-Han, Meng-Jung Yang, Cheng-Chung Lee, Meng-Che Hsieh, T. C. Chang, Bo-Yuan Su, Terry Tai-Jui Wang
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1742-1745
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da2e0ae29577d536306781f592a1ca94
https://doi.org/10.1002/sdtp.12000
https://doi.org/10.1002/sdtp.12000
Autor:
Wei-Yuan Cheng, Shau-Fei Cheng, Chen-Tsai Yang, Wei-Han Chen, Hsin-Cheng Lai, Tai-Jui Wang, Yuh-Zheng Lee
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Flexible Hybrid Electronics (FHE) is in the limelight for next generation electronics, it has good potential for further development as the priority areas for focused study, not only can it create new products, but also meet the needs of flexible, be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3607728d37be572551f72e293a999ce4
https://doi.org/10.1109/ectc.2019.00289
https://doi.org/10.1109/ectc.2019.00289
Autor:
Ting-Chang Chang, Terry Tai-Jui Wang, Po-Yung Liao, I-Yu Huang, Bo-Wei Chen, Chung-Yi Yang, Yu-Ju Hung, Shin-Ping Huang, T. C. Chang, Ann-Kuo Chu, Bo-Yuan Su, Su-Chun Kuo
Publikováno v:
IEEE Electron Device Letters. 37:1010-1013
This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7274258fee19d7b1097799a8a814205
https://doi.org/10.1109/led.2016.2584138
https://doi.org/10.1109/led.2016.2584138
Autor:
Terry Tai-Jui Wang, Cheng-Hung Yu, Tzu-Yen Chang, Chieh-Wei Feng, Yu-Hua Chung, Dzu-How Yu, Chien-Hsun Chu, Hsin-Cheng Lai, Wei-Han Chen
Publikováno v:
2018 13th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
In order to add the value of FOPLP technology, low temperature poly-silicon thin-film transistor (LTPS-TFT) integrated in RDL with panel level technology has been evaluated. LTPS-TFTs need to be protected by the barrier structure in Cu plating proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e35eb5733f26c5e90134d68c7648f6
https://doi.org/10.1109/impact.2018.8625836
https://doi.org/10.1109/impact.2018.8625836
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
FOPLP is attracted more and more attention because it was carried out in panel form for cost-effective products. In this paper, for Chip-last FOPLP manufacturing, we proposed to utilize LCD facilities as well as panel-form plating equipment for RDL m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1fdf7c21b3a656d7081283bdc44a12
https://doi.org/10.1109/ectc.2018.00065
https://doi.org/10.1109/ectc.2018.00065