Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Tai Hong Chen"'
Publikováno v:
Radiation Effects & Defects in Solids. Sep2007, Vol. 162 Issue 9, p633-636. 4p. 1 Chart.
Publikováno v:
Applied Sciences, Vol 7, Iss 1, p 56 (2017)
The gas barrier property of a silicon oxide (SiOx) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the gl
Externí odkaz:
https://doaj.org/article/b4fadd8a09204c0d96271a666b06b685
Autor:
Jian-Zhi Chen1 jerry61310@gmail.com, Tai-Hong Chen2 thchen1208@itri.org.tw, Li-Wen Lai2 lwlai@itri.org.tw, Pei-Yu Li1 dsliu@ios.nfu.edu.tw, Hua-Wen Liu1 dsliu@nfu.edu.tw, Yi-You Hong1 a0922639175@gmail.com, Day-Shan Liu1 dsliu@sunws.nfu.edu.tw
Publikováno v:
Materials (1996-1944). Jul2015, Vol. 8 Issue 7, p4273-7286. 14p. 1 Black and White Photograph, 1 Diagram, 3 Charts, 6 Graphs.
Autor:
Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu
Publikováno v:
Applied Sciences, Vol 6, Iss 2, p 60 (2016)
Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of t
Externí odkaz:
https://doaj.org/article/4ef2c355e465489a86ce6bd9bb0134eb
Autor:
Shun-Chi Chen, Sheng-Fu Lin, Day-Shan Liu, Chun-Hao Chang, Hua-Wen Liu, Tai-Hong Chen, Yong-Ji Su
Publikováno v:
Microsystem Technologies. 24:4149-4158
In this study, silicon oxynitride (SiOxNy) films and three-paired organosilicon/SiOxNy multilayered structures prepared by the plasma-enhanced chemical vapor deposition were respectively deposited onto the polyethylene terephthalate and silicon subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15ca357396ec7c8dad227da3c741d9cc
https://doi.org/10.1007/s00542-017-3690-4
https://doi.org/10.1007/s00542-017-3690-4
Autor:
Jin-How Chang, Tai-Hong Chen, Tsung-Hsin Lee, Zheng-Wen Xu, Day-Shan Liu, Yu-Kai Zhang, Pei-Yu Li
Publikováno v:
Materials
Volume 11
Issue 7
Materials, Vol 11, Iss 7, p 1089 (2018)
Volume 11
Issue 7
Materials, Vol 11, Iss 7, p 1089 (2018)
In this work, the surface morphology of a hydrophobic organosilicon film was modified as it was deposited onto a silver seed layer with nanoparticles. The surface hydrophobicity evaluated by the water contact angle was significantly increased from 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6e51b44bc53fcd1ea4b273649434935
http://europepmc.org/articles/PMC6073231
http://europepmc.org/articles/PMC6073231
Autor:
Tai-Hong Chen, Tsung-Hsin Lee, Zheng-Wen Xu, Jin-How Chang, Day-Shan Liu, Yu-Kai Zhang, Pei-Yu Li
Publikováno v:
2018 IEEE International Conference on Applied System Invention (ICASI).
In this work, a silver seed layer was deposited onto the silicon substrate prior to the deposition of the organosilicon film with the hydrophobic surface. Nanoparticle structures of the seed layer were formed after a post-annealing treatment. The sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19fc83f745cb2571bca5af18ee4e6daf
https://doi.org/10.1109/icasi.2018.8394600
https://doi.org/10.1109/icasi.2018.8394600
Publikováno v:
Microelectronic Engineering. 148:5-9
In this study, a rapid, cost-effective, and room-temperature achieved selectively photochemical etching (SPCE) process was developed to improve the photocatalytic activity of a PECVD-deposited amorphous titanium oxide (a-TiOx) film. The a-TiOx film t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300f387d5421dfca60c31e080cbc39cf
https://doi.org/10.1016/j.mee.2015.07.011
https://doi.org/10.1016/j.mee.2015.07.011
Publikováno v:
Applied Surface Science. 354:74-78
We investigated the electro-optical properties of light emitting diodes (LEDs) fabricated by using the n -ZnO/ p -GaN heterojunction structures annealed at 450 °C and 700 °C, in vacuum ambient. A dominant near-UV emission at approximately 420 nm wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c85382fa98dfa953571a623223723b4
https://doi.org/10.1016/j.apsusc.2015.03.179
https://doi.org/10.1016/j.apsusc.2015.03.179
Publikováno v:
Surface and Coatings Technology. 280:92-99
In this study, we demonstrated the effect of the organosilicon layer in the pairs of the organosilicon/silicon oxide (SiO x ) multi-layered structure on the barrier property to water vapor permeation and on the mechanical flexibility under tensile st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11ca90f95f6aa97f10b78d701573ec3
https://doi.org/10.1016/j.surfcoat.2015.08.063
https://doi.org/10.1016/j.surfcoat.2015.08.063