Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tai Hee Eun"'
Autor:
Im Gyu Yeo, Soon-Ku Hong, Tai Hee Eun, Han Suk Seo, Seung Seok Lee, Jang Yul Kim, Myong Chuel Chun
Publikováno v:
Materials Science Forum. 1004:51-56
We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5ac5062ce379335c0840cbd229a08d
https://doi.org/10.4028/www.scientific.net/msf.1004.51
https://doi.org/10.4028/www.scientific.net/msf.1004.51
Publikováno v:
Materials Science Forum. 963:64-67
The generation and transformation of dislocations in 4H-SiC crystals grown by PVT were investigated. Experiments were carried out in two stages for more comprehensive observation on dislocation behaviors. For the first stage known as initial growth,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64e097af2148c325d5eeb323254c21d
https://doi.org/10.4028/www.scientific.net/msf.963.64
https://doi.org/10.4028/www.scientific.net/msf.963.64
Autor:
Myoung-Chuel Chun, Soon-Ku Hong, Myoungho Jeong, Jeong Yong Lee, Dong Yeob Kim, Im Gyu Yeo, Tai-Hee Eun
Publikováno v:
Korean Journal of Materials Research. 26:656-661
4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5011d44906617e83f077513d5ff005c
https://doi.org/10.3740/mrsk.2016.26.11.656
https://doi.org/10.3740/mrsk.2016.26.11.656
Autor:
Hee Tae Lee, Jung Gon Kim, Hee Won Shin, Jang Yul Kim, Mi Seon Park, Myoung Chul Chun, Yeon Suk Jang, Hee Jun Lee, Si Hyun Lee, Tai Hee Eun, Won-Jae Lee, Im Gyu Yeo
Publikováno v:
Materials Science Forum. :43-46
The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd6d67756edb2153c1b1cdc57f20c68
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
Autor:
Won-Jae Lee, Tai-Hee Eun, Hee Tae Lee, Jang-Yul Kim, Jung-Gon Kim, Yeon-Suk Jang, Si-Hyun Lee, Hee-Jun Lee, Hee Won Shin, Im-Gyu Yeo, Mi-Seon Park, Myoung-Chul Chun
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 25:51-55
The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f767d88918d2405d4af3f0357dcc4cc
https://doi.org/10.6111/jkcgct.2015.25.2.051
https://doi.org/10.6111/jkcgct.2015.25.2.051
Autor:
Park Jong Hwi, Jang Yul Kim, Im Gyu Yeo, Seung Seok Lee, Myoung Chul Chun, Il Soo Kim, Tai Hee Eun, Tae Kyoung Yang, Won Jae Lee
Publikováno v:
Materials Science Forum. :17-20
The present research was focused to investigate various process parameters influenced on the large 4H-SiC crystal growth on a 6H-SiC seed by PVT method. The crucible diameter along horizontal axial direction and inserted graphite ring was modified to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a589c4ed7675dc4a5ade8988dae6b4
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
Autor:
Jong-Hwi Park, Mi-Seon Park, Im-Gyu Yeo, Seung-Seok Lee, Won-Jae Lee, Sang-Il Lee, Myong-Chuel Chun, Woo Sung Yang, Byoung-Chul Shin, Tai-Hee Eun, Jung-Young Jung
Publikováno v:
Journal of the Korean Physical Society. 59:448-451
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c12290d958f21effa4382a5f2ea9913
https://doi.org/10.3938/jkps.59.448
https://doi.org/10.3938/jkps.59.448
Autor:
Heui Bum Ryu, Tae Woo Lee, Mi Seon Park, Byoung Chul Shin, Seung Seok Lee, Park Jong Hwi, Woo Sung Yang, Tai Hee Eun, Won-Jae Lee, Il Soo Kim, Im Gyu Yeo, Myong Chuel Chun
Publikováno v:
Materials Science Forum. :40-43
Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of the 6H-SiC seed by a PVT method. The axial temperature gradients were increased throughout increasing the cruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0a6b7f0ebe8a1b19ea45488b5abb50
https://doi.org/10.4028/www.scientific.net/msf.679-680.40
https://doi.org/10.4028/www.scientific.net/msf.679-680.40
Autor:
Seung Seok Lee, Won Jae Lee, Park Jong Hwi, Im Gyu Yeo, Il Soo Kim, Myong Chuel Chun, Tai Hee Eun, Woo Sung Yang, Tae Woo Lee, Heui Bum Ryu, Byoung Chul Shin, Mi Seon Park
Publikováno v:
Materials Science Forum. :44-47
The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999128601f0ca70afd0942c0f8a68b5f
https://doi.org/10.4028/www.scientific.net/msf.679-680.44
https://doi.org/10.4028/www.scientific.net/msf.679-680.44
Publikováno v:
Advanced Materials. 20:3268-3273
Monodisperse microspheres of high-refractive-index substances have a variety of potential applications, including optical resonators, microlenses, light diffusers, and chemical and biological probes. Equal-size microspheres can be obtained by the sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4ca87d99132ebfff4c9d154dcbb7e7
https://doi.org/10.1002/adma.200702622
https://doi.org/10.1002/adma.200702622