Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tahereh Radsar"'
Publikováno v:
Silicon. 13:3337-3350
Growth of the electronic industry has been accompanied by the increasing number of components on a chip. Consequently, it is necessary to shrink device dimension. In this paper, effects of channel dimension reducing of the graphene nanoribbon field e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b29bdc55fc9cc18e8ff731de79a95a5
https://doi.org/10.1007/s12633-020-00714-9
https://doi.org/10.1007/s12633-020-00714-9
Publikováno v:
Journal of Computational Electronics. 19:1507-1515
In nanoscale transistors, electron tunneling increases and causes a large leakage current due to the reduced channel length and gate oxide thickness. To reduce the short-channel effects and leakage current, the gate oxide can be selected from materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056daebb421b87341e49fbad7f04360b
https://doi.org/10.1007/s10825-020-01557-8
https://doi.org/10.1007/s10825-020-01557-8
Publikováno v:
Optical and Quantum Electronics. 53
Reduction in the dimensions of silicon based devices has produced extraordinary developments in the performance of electronic systems. Recently, the advantages and challenges that caused by silicon devices shrinking have been investigated in many stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdda4880cef0211a50961d3c31eea02e
https://doi.org/10.1007/s11082-021-02839-6
https://doi.org/10.1007/s11082-021-02839-6
Publikováno v:
Superlattices and Microstructures. 153:106869
The dimension down scaling capability of the silicon based transistors has produced significant developments in the electronic industry. The channel length reduction has been accompanied by many limitations and challenges in the performance of the tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::067fa4d976c7dbdb6e6c16cdf2234e42
https://doi.org/10.1016/j.spmi.2021.106869
https://doi.org/10.1016/j.spmi.2021.106869