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Autor:
Behnam Moeini, Tahereh Avval, Hidde Brongersma, Stanislav Průša, Pavel Bábík, Elena Vaníčková, Brian R Strohmeier, David S Bell, Dennis Eggett, Steven M George, Matthew R Linford
Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si/SiO2) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c73476886a6e13c3ae26c4334a69c6
https://doi.org/10.20944/preprints202305.2043.v1
https://doi.org/10.20944/preprints202305.2043.v1
