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Autor:
Gian Lorusso, Danilo De Simone, Hiroyuki Shindo, Tsuyoshi Kondo, Hirohito Koike, Frieda Van Roey, Peter De Bisschop, Yasutaka Toyoda, Christophe Beral, Taeko Kashiwa, Anne-Laure Charley, Yasushi Ebizuka, Yukari Yamada, Naoma Ban, Mohamed Saib
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cd4c506ce2b869531616eff42e9209
https://doi.org/10.1117/12.2583691
https://doi.org/10.1117/12.2583691
