Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Taeko Ikarashi"'
Autor:
Hiromu Yamaguchi, Ken-ichi Koyanagi, Haruhiko Ono, Nobuyuki Ikarashi, Keisuke Shinoda, Taeko Ikarashi, Yumiko Hosokawa
Publikováno v:
Journal of Applied Physics. 89:995-1002
The Si–O–Si bonds formed at the Ta2O5/Si interface by annealing were investigated by using Fourier transform infrared absorption spectroscopy. The Ta2O5 thin films deposited on Si substrates were annealed in different ambient (H2O, O2, and N2) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::add6226c2fe81ea96d0d4da0c30ee00b
https://doi.org/10.1063/1.1334922
https://doi.org/10.1063/1.1334922
Autor:
A. Tanabe, Manabu Ikemoto, Taeko Ikarashi, Kaoru Mori, Takashi Nakagawa, Junko Nakatsuru, Koichi Terashima, Toru Tatsumi, Hiroki Date
Publikováno v:
Applied Surface Science. 254:6165-6167
We fabricated Ge-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) by using replacement gate process and selective epitaxial growth. In our method, thin Ge layers were selectively grown on the channel region of MOSFETs after the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d738c1a156024c7a3c6edbb22c6120f
https://doi.org/10.1016/j.apsusc.2008.02.143
https://doi.org/10.1016/j.apsusc.2008.02.143
Publikováno v:
Journal of Applied Physics. 84:6064-6069
We investigated transition layers at the interface of the thin SiO2 film successively etched back by diluted HF, using infrared reflection-absorption spectroscopy. The etching rate of the oxide film reveals that there is a Si-rich transition layer wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f56b3d287ca8a8326c262483b58d7a
https://doi.org/10.1063/1.368917
https://doi.org/10.1063/1.368917
Publikováno v:
Materials Science Forum. :587-592
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4d59511d64a83a9191690ca656df4c
https://doi.org/10.4028/www.scientific.net/msf.258-263.587
https://doi.org/10.4028/www.scientific.net/msf.258-263.587
Publikováno v:
Journal of Crystal Growth. 136:349-354
Faceting morphology of Si layers selectively grown at different growth times has been investigated to study facet formation mechanism. The epitaxial layers have been grown on Si(100) patterned substrates using Si 2 H 6 with an ultrahigh vacuum chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a037fcebe35180a2975f9e37904cab
https://doi.org/10.1016/0022-0248(94)90438-3
https://doi.org/10.1016/0022-0248(94)90438-3
Publikováno v:
Applied Physics Letters. 74:203-205
We investigated bonding configurations of nitrogen atoms in silicon oxynitride films, resulting in a 960 cm−1 absorption peak, which is a higher frequency than that for Si3N4 (840 cm−1). The 960 cm−1 peak was observed in the films for which an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e23c4e2473b5ea1284eaa4b4d6044e90
https://doi.org/10.1063/1.123293
https://doi.org/10.1063/1.123293
Publikováno v:
Applied Physics Letters. 72:2853-2855
The formation process of buried oxide in low-dose oxygen-implanted wafers was investigated using Fourier-transform infrared absorption spectroscopy. In the wafers as-implanted with oxygen, the peak position of the Si–O–Si asymmetric stretching mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd9eae30b0e90a1b474ce389c17718f
https://doi.org/10.1063/1.121479
https://doi.org/10.1063/1.121479
Autor:
Makiko Oshida, Hiroshi Sunamura, Shinji Fujieda, Hirohito Watanabe, Setsu Kotsuji, Nobuyuki Ikarashi, Ayuka Morioka, Taeko Ikarashi
Publikováno v:
2006 International Electron Devices Meeting.
For retention improvement in scaled SONOS-type nonvolatile memory, deep traps with controllable density were formed by adding metal impurities into gate oxide. We find that Ti additives create deep traps in silicon dioxide, with high electron capture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f211b1ea56b783a411826c4268a20c0
https://doi.org/10.1109/iedm.2006.346949
https://doi.org/10.1109/iedm.2006.346949
Autor:
Ayuka Morioka, Heiji Watanabe, Kenzo Manabe, Kensuke Takahashi, Taeko Ikarashi, Toru Tatsumi, Takuya Yoshihara
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f416592240e543f6bbbfd1927f182d
https://doi.org/10.7567/ssdm.2004.a-2-1
https://doi.org/10.7567/ssdm.2004.a-2-1
Autor:
Takuya Yoshihara, Kenzo Manabe, Heiji Watanabe, Toru Tatsumi, Taeko Ikarashi, Ayuka Morioka, Kensuke Takahashi
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Dual metal gate transistors with high-k gate dielectrics have been investigated for low-power metal oxide semiconductor (MOS) devices in 45 nm nodes and beyond. Using high-quality HfSiO gate dielectrics, using TiN and Ta for the gate electrode, and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44f251da94671dffa235533c595a06b
https://doi.org/10.7567/ssdm.2004.a-2-3
https://doi.org/10.7567/ssdm.2004.a-2-3