Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Taek-seung Yang"'
Autor:
Chang Hyun Kim, Yinhua Cui, Sun Jae Lee, Ji Hwan Park, Areum Kim, Heesoo Choi, Dong Hyun Lee, Soo-Kil Kim, Jong-Won Sun, Lee Seul Oh, Hyun Jin Park, Hyungbin Son, Eunmi Choi, Taek-Seung Yang, Sung Gyu Pyo
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:4291-4296
We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfb1442dc55b4e4744fc549cb952f53d
https://doi.org/10.1166/jnn.2013.7172
https://doi.org/10.1166/jnn.2013.7172
Publikováno v:
Vacuum. 85:65-68
Influence of oxygen adsorption on CO chemisorption behavior over W(110) surfaces was studied using valence band spectra and thermal desorption spectroscopy (TDS). In the absence of O, CO formed a tilted and a vertical structure at 120 K on W(110). In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14cb89551a989b7f7cefd26d0192031
https://doi.org/10.1016/j.vacuum.2010.04.003
https://doi.org/10.1016/j.vacuum.2010.04.003
Publikováno v:
Bulletin of the Korean Chemical Society. 30:1353-1356
This study examined the adsorption of CO on a Mo(110) surface by Thermal Desorption Spectroscopy (TDS) and synchrotron-radiation based photoemission spectroscopy (SRPES). CO desorption was observed at approximately 400 K (α-CO) and > 900 K (β-CO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f2916b125b2f8698b1309c8a630c12
https://doi.org/10.5012/bkcs.2009.30.6.1353
https://doi.org/10.5012/bkcs.2009.30.6.1353
Autor:
Gyung Hee Lee, Young Dok Kim, Jin-Hyo Boo, Hyun Seok Han, Soon-Bo Lee, Hae-geun Jee, Taek-seung Yang
Publikováno v:
Bulletin of the Korean Chemical Society. 29:1115-1120
). Tilted structures have been suggested to be precursorsof dissociative chemisorption; however, experimental evidence is provided for the non-dissociativechemisorption of CO at temperatures above 900 K (which is referred to as the β-state): TDS sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3f5f2b2f6685d47b68995fa1f7af3b
https://doi.org/10.5012/bkcs.2008.29.6.1115
https://doi.org/10.5012/bkcs.2008.29.6.1115
Autor:
Sungmoon Kim, Jin-Ha Hwang, Sun K. Park, Eun-Joo Lee, Young K. Lee, Taek-Mo Chung, Yunsoo Kim, Choongkeun Lee, Taek Seung Yang, Hong S. Jang, Chang G. Kim, Nam-Soo Lee, Ki-Seok An, Wontae Cho
Publikováno v:
Chemistry of Materials. 17:6713-6718
Hafnium oxide films have been deposited on silicon substrates by metal organic chemical vapor deposition using the novel single precursor, hafnium 3-methyl-3-pentoxide {Hf[OC(CH3)(C2H5)2]4, Hf(mp)4}, with no additional oxygen source, and the depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870e5189d680eeabae85214dd4ec50a0
https://doi.org/10.1021/cm050662t
https://doi.org/10.1021/cm050662t
Autor:
Chang Gyoun Kim, Taek-Mo Chung, Yunsoo Kim, Minchan Kim, Ki-Seok An, Wontae Cho, Taek Seung Yang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1238-1243
A precursor originally synthesized for the chemical vapor deposition of metallic nickel, Ni(dmamp)2 (dmamp=1-dimethylamino-2-methyl-2-propanolate, -OCMe2CH2NMe2), has been adopted as a nickel source for the atomic layer deposition of nickel oxide (Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93213aba33269095e90746ba70ed7430
https://doi.org/10.1116/1.1875172
https://doi.org/10.1116/1.1875172
Publikováno v:
IEEE Electron Device Letters. 33:1580-1582
We evaluate the electrical and optical properties of a complementary metal-oxide-semiconductor (CMOS) image sensor with shallow trench isolation (STI) sidewall doped by plasma-doping (PLAD) method using B2H6. PLAD can be used to fabricate an STI side
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21466ecb2baae1e0a94236ff93d70c44
https://doi.org/10.1109/led.2012.2212233
https://doi.org/10.1109/led.2012.2212233
Investigation of mechanism of pattern deformation on TiN substrate and O2 plasma effect without BARC
Publikováno v:
Optical Microlithography XXI.
The pattern deformation such as photoresist lifting after lithography due to not enough photoresist adhesion to substrate is become critical issue when aspect ratio is much higher than what photoresist adhesion can support. This aspect ratio is getti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161ed2e947bd654051064ad58253daf1
https://doi.org/10.1117/12.773143
https://doi.org/10.1117/12.773143