Zobrazeno 1 - 10
of 174
pro vyhledávání: '"Taek‐Mo Chung"'
Publikováno v:
ACS Omega, Vol 9, Iss 29, Pp 31871-31877 (2024)
Externí odkaz:
https://doaj.org/article/efcda7f7c64e415d9988d2526aee1fc8
Autor:
Chanwoo Park, Seungjin Song, Heenang Choi, Bo Keun Park, Ji Yeon Ryu, Youngkwon Kim, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 9, Iss 29, Pp 31864-31870 (2024)
Externí odkaz:
https://doaj.org/article/51b7e83ad38749d081deaf61e6a72d44
Autor:
Heenang Choi, Young Eun Song, Dongseong Park, Chanwoo Park, Bo Keun Park, Seung Uk Son, Jongsun Lim, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 9, Iss 26, Pp 28707-28714 (2024)
Externí odkaz:
https://doaj.org/article/db7d1a85958943a3b9cd422fd98816f3
Autor:
Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, Kibum Kang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direc
Externí odkaz:
https://doaj.org/article/55b0b490549943fb9f81834d5ed9a8de
Autor:
Heenang Choi, Chanwoo Park, Sung Kwang Lee, Ji Yeon Ryu, Seung Uk Son, Taeyong Eom, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 8, Iss 46, Pp 43759-43770 (2023)
Externí odkaz:
https://doaj.org/article/469ef452837841beb5b409704d112ed0
Autor:
Seung Hoon Oh, Jeong Min Hwang, Hyeonbin Park, Dongseong Park, Young Eun Song, Eun Chong Ko, Tae Joo Park, Taeyong Eom, Taek‐Mo Chung
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract Ru films are grown on Pt, TiN, and SiO2 substrates via atomic layer deposition (ALD) using Ru(II)(η5‐C7H7O)(η5‐C7H9) as the novel Ru metalorganic precursor and O2 as the reactant. The ALD self‐limiting film growth is confirmed at the
Externí odkaz:
https://doaj.org/article/0f92bfbac9794a0188a952c412ad6fbf
Autor:
Seong Ho Han, Raphael Edem Agbenyeke, Ga Yeon Lee, Bo Keun Park, Chang Gyoun Kim, Taeyong Eom, Seung Uk Son, Jeong Hwan Han, Ji Yeon Ryu, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 7, Iss 1, Pp 1232-1243 (2021)
Externí odkaz:
https://doaj.org/article/14964935eca54611ac6d5c4882248d31
Autor:
Jeong Min Hwang, Sung Kwang Lee, Sunyoung Shin, Ji-Seoung Jeong, Hae Sun Kim, Ji Yeon Ryu, Taeyong Eom, Bo Keun Park, Chang Gyoun Kim, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 6, Iss 38, Pp 24795-24802 (2021)
Externí odkaz:
https://doaj.org/article/d021cdd4cf14426199db81fc769d3b1c
Autor:
Chanwoo Park, Jeong Min Hwang, Yongmin Go, Heenang Choi, Bo Keun Park, Chang Gyoun Kim, Ji Yeon Ryu, Chang Seop Hong, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 6, Iss 24, Pp 15948-15956 (2021)
Externí odkaz:
https://doaj.org/article/de3055754dce470491f6f3f003293535
Autor:
Seong Ho Han, Sheby Mary George, Ga Yeon Lee, Jeong Hwan Han, Bo Keun Park, Chang Gyoun Kim, Seung Uk Son, Myoung Soo Lah, Taek-Mo Chung
Publikováno v:
ACS Omega, Vol 2, Iss 9, Pp 5486-5493 (2017)
Externí odkaz:
https://doaj.org/article/9c535c768e3e4c92b946520580438c80