Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Taehoon Jang"'
Autor:
Taehoon Jang1, Sung-Tae Kim1 kimst015@hanmail.net, Jin Lee1, Won-Hee Lee1, Keun-Soo Lee1, Se-Young Pyo1, Junghae Ko2, Hangwoo Lee3, Yeong Gyun Jeong1
Publikováno v:
Journal of Cerebrovascular & Endovascular Neurosurgery. Mar2024, Vol. 26 Issue 1, p37-45. 9p.
Publikováno v:
Organometallics. 41:3032-3037
Autor:
Uiho Choi, Jaeyeon Han, Byeongchan So, Kyeongjae Lee, Okhyun Nam, Taemyung Kwak, Taehoon Jang, Yongjun Nam
Publikováno v:
Thin Solid Films. 675:148-152
In this study, the effect of NH3 pre-treatment is investigated to obtain high-quality nitrogen-polar GaN grown on a SiC substrate. The GaN/AlN/C-face 4° off-cut SiC structure is successfully grown with pre-treatment temperatures of 1250, 1300, and 1
Publikováno v:
Surface and Coatings Technology. 307:1124-1128
In order to prevent reduction of output power of AlGaN/GaN heterostructure field effect transistors(HFETs) with inorganic passivation layer such as SiO 2 and SiN x after TO-220 plastic package, SiN x /photosensitive polyimide(PSPI) dual layers were p
Publikováno v:
IEEE Transactions on Electron Devices. 63:620-624
This paper reports a bonding pad over active (BPOA) structure with photosensitive polyimide (PSPI) as the intermetal dielectric layer to reduce the chip size of high-power enhancement-mode AlGaN/GaN heterojunction FETs (HEFTs) on a 150-mm (6-in) Si s
Publikováno v:
Journal of Vacuum Science & Technology B. 38:022204
In this paper, the authors report the effect of the AlxGa1−xN buffer layer on the structural and electrical properties of an AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor (HEMT). As the Al composition of the buffer l
Autor:
Taehoon Jang, Okhyun Nam, Yongjun Nam, Taemyung Kwak, Donghyeop Jung, Kyeongjae Lee, Byeongchan So, Uiho Choi
Publikováno v:
physica status solidi (a). 217:1900694
Autor:
Taehoon Jang, Taemyung Kwak, Yongjun Nam, Myoung-Jin Kang, Seokgyu Choi, Ho-Young Cha, Kyeongjae Lee, Min Han, Donghyeop Jung, Hyun-Seop Kim, Kwang-Seok Seo, Sang-Min Lee, Okhyun Nam, Byeongchan So, Uiho Choi
Publikováno v:
physica status solidi (a). 217:1900695
Autor:
Taehoon Jang, Kwang-Seok Seo, Uiho Choi, Donghyeop Jung, Myoung-Jin Kang, Taemyung Kwak, Ho-Young Cha, Kyeongjae Lee, Yongjun Nam, Byeongchan So, Okhyun Nam, Hyun-Seop Kim
Publikováno v:
Japanese Journal of Applied Physics. 58:121003
We investigated the growth behavior of GaN grown on AlN along with Ⅴ/Ⅲ ratio and pressure variation, and found out lateral growth regime for fully coalesced channel layer of the AlN-based double-hetero structure high electron mobility transistor
Publikováno v:
Electronic Materials Letters. 11:213-216
This study examined chip shrink technology for lateral-type AlGaN/GaN HFETs on 150 mm Si substrates fabricated with a bonding pad above the active area (BPAA) structure. The SiO2/polyimide layers were used as inter metal dielectric (IMD) layers, whic