Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Taehong Gwon"'
Autor:
Cheol Seong Hwang, Chanyoung Yoo, Sergei A. Ivanov, Sang Gyun Kim, Taehong Gwon, Eui-Sang Park, Taeyong Eom, Moo-Sung Kim, Manchao Xiao, Sijung Yoo, Iain Buchanan
Publikováno v:
Chemistry of Materials. 29:8065-8072
In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. The precursors reacted together to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb37960fbbbae5dad7028fad416949b2
https://doi.org/10.1021/acs.chemmater.7b01236
https://doi.org/10.1021/acs.chemmater.7b01236
Autor:
Sijung Yoo, Manchao Xiao, Sergei Vladimirovich Ivanov, Deok-Yong Cho, Iain Buchanan, Cheol Seong Hwang, Taehong Gwon, Taeyong Eom, Moo-Sung Kim, Han-Koo Lee
Publikováno v:
Chemistry of Materials. 28:7158-7166
In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH3)3)2)2, in which Ge is in +2 oxidation state, and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. GeTe films were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2126955383e3fe3143d5b09c15ce069
https://doi.org/10.1021/acs.chemmater.6b03704
https://doi.org/10.1021/acs.chemmater.6b03704
Publikováno v:
ACS Photonics. 3:1265-1270
The multilayered optical coating whose structure consists of optical cavity and multiple layers of ultrathin phase change material (PCM) film is presented. The color changing is enabled via transition between amorphous and crystalline phases of PCM,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83022c0c4f72be66b8d4df99ae6a504a
https://doi.org/10.1021/acsphotonics.6b00246
https://doi.org/10.1021/acsphotonics.6b00246
Autor:
Taehwan Moon, Min Hyuk Park, Soonsil Hyun, Y. H. Lee, Ki-Se Kim, Yae Jean Kim, Taehong Gwon, Cheol Seong Hwang, Hyun-Jib Kim
Publikováno v:
Journal of Materials Chemistry C. 4:6864-6872
HfO2 thin films, extensively studied as high-k gate dielectric layers in metal-oxide-semiconductor field effect transistors, have attracted interest of late due to their newly discovered ferroelectricity in doped HfO2. The appearance of the ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a369440108f09da5734745a03e1409
https://doi.org/10.1039/c6tc02003h
https://doi.org/10.1039/c6tc02003h
Autor:
Manchao Xiao, Taeyong Eom, Byung Joon Choi, Iain Buchanan, Sergei Vladimirovich Ivanov, Moo-Sung Kim, Sijung Yoo, Taehong Gwon, Cheol Seong Hwang
Publikováno v:
Chemistry of Materials. 27:3707-3713
For phase change memories application, Ge–Sb–Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a29c25a2724d98c75b96347f3de640d7
https://doi.org/10.1021/acs.chemmater.5b00805
https://doi.org/10.1021/acs.chemmater.5b00805
Autor:
Sijung Yoo, Sergei Vladimirovich Ivanov, Byung Joon Choi, Moo-Sung Kim, Taeyong Eom, Manchao Xiao, Iain Buchanan, Taehong Gwon, Andrew Adamczyk, Cheol Seong Hwang
Publikováno v:
Journal of Materials Chemistry C. 3:1365-1370
The chemical interaction between the [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH3)3Si] displays greater affinity for Te than for Sb, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd92f3f769af122efdc2ccbfd620415
https://doi.org/10.1039/c4tc02688h
https://doi.org/10.1039/c4tc02688h
Publikováno v:
Nanoscale. 7:6340-6347
The mechanism of bipolar resistive switching (BRS) of amorphous Ge2Sb2Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined. Typical bipolar resistive switching behavior with a high resistance ratio (∼103) and reliable s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32259bd3f27e54391264cd1038acaf44
https://doi.org/10.1039/c5nr01361e
https://doi.org/10.1039/c5nr01361e
Autor:
Eui-Sang Park, Sang Gyun Kim, Ahmed Yousef Mohamed, Han-Koo Lee, Taehong Gwon, Deok-Yong Cho, Chanyoung Yoo, Sijung Yoo, Cheol Seong Hwang
Publikováno v:
ACS applied materialsinterfaces. 9(47)
The local bonding structures of GexTe1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH3)3)2)2 and ((CH3)3Si)2Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd78fac86b0aaa01b636dd41d54337f5
https://pubmed.ncbi.nlm.nih.gov/29111646
https://pubmed.ncbi.nlm.nih.gov/29111646
Autor:
Moo-Sung Kim, Sijung Yoo, Byung Joon Choi, Taeyong Eom, Manchao Xiao, Iain Buchanan, Taehong Gwon, Cheol Seong Hwang
Publikováno v:
Chemistry of Materials. 26:1583-1591
(GeTe2)(1–x)(Sb2Te3)x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 °C using Ge(OCH3)4 or Ge(OC2H5)4, Sb(OC2H5)3, and [(CH3)3Si]2Te as the metal–organic precursors of the Ge, Sb, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec4fb1db82fdc1f3e15cffcd91fe23fe
https://doi.org/10.1021/cm4034885
https://doi.org/10.1021/cm4034885
Autor:
Byung Joon Choi, Seol Choi, Manchao Xiao, Iain Buchanan, Deok-Yong Cho, Taehong Gwon, Sang Ho Rha, Woongkyu Lee, Min Hwan Lee, Cheol Seong Hwang, Moo-Sung Kim, Taeyong Eom
Publikováno v:
Chemistry of Materials. 24:2099-2110
Phase change random access memory appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density phase change memory (≫1 Gb) depends heavily on the thin film growth technique for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57707422afe0fe4c217688d5e9ccf8c9
https://doi.org/10.1021/cm300539a
https://doi.org/10.1021/cm300539a