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pro vyhledávání: '"Taeheui Kwon"'
Autor:
Tai-kyu Kang, Chang-Won Yang, Minsu Kim, CheolWoo Yang, Bong-Seok Han, YongTae Kim, BumDol Kim, Sung Sang-Hyun, Kyeong-Min Chae, MyungJin Park, Chang-Hyuk Lee, Go-Hyun Lee, JiYoung Kwon, Chun-Woo Jeon, Jin Seo, Taeheui Kwon, Hwang Huh, Chang-Man Son, Dae-Il Choi, Jae-Seok Park, Gi-Hyun Bae, KangWoo Park, Oh Sung-Lae
Publikováno v:
2012 4th IEEE International Memory Workshop.
We have developed a 64Gb MLC NAND Flash using a sub-20 nm process technology, which realizes 800MB/s data transfer rate with DDR mode. In order to achieve 800MB/s transfer rate, we introduce slim transistors of ~ 3 nm-thick gate oxide and dual poly g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231d7ffb9a0e5e2b732921ae214536fd
https://doi.org/10.1109/imw.2012.6213644
https://doi.org/10.1109/imw.2012.6213644
