Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Taegun Park"'
Publikováno v:
한국해양공학회지, Vol 38, Iss 4, Pp 164-173 (2024)
In this study, a submerged breakwater with effective wave control and eco-friendly characteristics is developed and proposed. Hydraulic experiments are conducted to compare the hydraulic performance of a submerged breakwater and an eco-friendly doubl
Externí odkaz:
https://doaj.org/article/56b072e77cf54458b253b5a83d73dd3d
Publikováno v:
Molecular & Cellular Toxicology. 19:277-282
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad4fa7a5f02e4d29106fab64724dfb8
https://doi.org/10.1007/s13273-022-00256-8
https://doi.org/10.1007/s13273-022-00256-8
Publikováno v:
ECS Transactions. 108:161-166
Silicon nitride (Si3N4) has been widely used as an insulating or sacrificial layer in various electronic devices. A removal of Si3N4 is also required in the semiconductor manufacturing process. In particular, in the 3D NAND flash memory manufacturing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2b7fecfca17cd8525a7b850ed9acf82
https://doi.org/10.1149/10804.0161ecst
https://doi.org/10.1149/10804.0161ecst
Publikováno v:
ECS Transactions. 108:155-160
Silicon nitride (Si3N4) has been widely used as an insulating or etch stop layer in the semiconductor devices [1]. For example, in a 3D V-NAND flash memory manufacturing process, Si3N4 is alternately stacked with silicon oxide (SiO2) to form a NAND s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88ce7be724f2e54efa685ac203d8cc0a
https://doi.org/10.1149/10804.0155ecst
https://doi.org/10.1149/10804.0155ecst
Publikováno v:
ACS Sustainable Chemistry & Engineering. 9:15661-15672
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::643eaede7b8d4a2a4f556d87e8a225d0
https://doi.org/10.1021/acssuschemeng.1c06192
https://doi.org/10.1021/acssuschemeng.1c06192
Publikováno v:
Journal of Industrial and Engineering Chemistry. 102:146-154
This work proposes the mechanism of the silicon nitride (Si3N4) dissolution reaction in phosphoric acid (H3PO4) solution and shows how to kinetically control the reaction. The various H3PO4 concentrations and temperature dependencies of Si3N4 dissolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7303b9315f274472a24c4cd11225697
https://doi.org/10.1016/j.jiec.2021.07.001
https://doi.org/10.1016/j.jiec.2021.07.001
Publikováno v:
Applied Surface Science. 619:156758
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d774b381fc3fd1c63d1e23d55dc7a9
https://doi.org/10.1016/j.apsusc.2023.156758
https://doi.org/10.1016/j.apsusc.2023.156758
Autor:
Taegun Park, Sangwoo Lim
Publikováno v:
Solid State Phenomena. 314:60-65
Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf22a341146ce7e1d5ca15f500ff126
https://doi.org/10.4028/www.scientific.net/ssp.314.60
https://doi.org/10.4028/www.scientific.net/ssp.314.60
Autor:
Eun Young Kim, Sohyeon Park, Jinkwan Kim, Ahran Song, Seung Gwan Lee, Yoonjin Park, Boyong Kim, Yoonhwa Jeong, Taegun Park, Jae Hwi Sung
Publikováno v:
Indian Journal of Microbiology. 60:526-534
Late embryogenesis abundant (LEA) proteins protect organisms from various environmental stresses; however, the underlying mechanism of LEA mediated therapeutic evasion is still unclear in both eukaryotes and prokaryotes. In this study, group 3 LEA pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe20b8f0304ba878622c0899cc742514
https://doi.org/10.1007/s12088-020-00899-y
https://doi.org/10.1007/s12088-020-00899-y
Publikováno v:
Applied Surface Science. 608:155143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c25c1ae0d49fd24979b125010682a5c
https://doi.org/10.1016/j.apsusc.2022.155143
https://doi.org/10.1016/j.apsusc.2022.155143