Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Taegeun Seong"'
Autor:
Bo-Eun Park, Hyungjun Kim, Sang-Kyun Im, Taegeun Seong, Taewook Nam, Sanghun Lee, Taehoon Cheon, Hwan-Sung Cheon, Sungmin Park, Soo-Hyun Kim, Hwi Yoon
Publikováno v:
Journal of Materials Chemistry C. 8:1344-1352
With the scaling down of complementary metal–oxide semiconductors (CMOS), atomic layer deposition of high-quality HfO2 has emerged as a key technology for ultrathin and high-k gate dielectrics. Recently, heteroleptic ligand structures have been int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6139a65741425133d7269287b2f94f88
https://doi.org/10.1039/c9tc05778a
https://doi.org/10.1039/c9tc05778a
Autor:
Vito Rutigliani, TaeGeun Seong, Daniele Piumi, Sven Van Elshocht, Anthony Peter, Vassilios Constantoudis, Yizhi Wu, Sara Paolillo, Stefan Decoster, Gian Lorusso, Frederic Lazzarino, Kathy Barla, David De Roest
Publikováno v:
SPIE Proceedings.
In this work, we explore the performances of a low-temperature PEALD technology used to trim/clean/smooth and reshape ArF photoresist lines that could subsequently receive an in-situ spacer deposition required to build up any SAxP grating. Different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43fd0e98858dc7177a2c741145376fc
https://doi.org/10.1117/12.2258040
https://doi.org/10.1117/12.2258040