Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Taegeon Lee"'
Publikováno v:
Sensors, Vol 22, Iss 3, p 1230 (2022)
The convergence of artificial intelligence (AI) is one of the critical technologies in the recent fourth industrial revolution. The AIoT (Artificial Intelligence Internet of Things) is expected to be a solution that aids rapid and secure data process
Externí odkaz:
https://doaj.org/article/db4ba3021af946869fcfdf9aecad0789
Autor:
Hongjin Lim, Young-Kyeong Kim, Hong-Sik Kim, Taegeon Lee, Md Monir Hossain, Hyun-Oh Jeong, Heon Sang Lee, Hyunjin Cho, Yongho Joo, Sang Seok Lee, Sungjune Park, Heesuk Rho, Hyeon Su Jeong, Myung Jong Kim, Seokhoon Ahn, Se Youn Moon, Keun Su Kim, Siyoung Q. Choi, Bumjoon J. Kim, Se Gyu Jang
Publikováno v:
ACS Applied Materials & Interfaces. 15:24681-24692
Publikováno v:
Current Applied Physics. 49:115-119
Autor:
Taesun Yun, Yong Bin Kim, Taegeon Lee, Heesuk Rho, Hyeongwoo Lee, Kyoung-Duck Park, Hong Seok Lee, Sangmin An
Publikováno v:
Nanoscale Advances. 5:1070-1078
The pencil-shaped micropipette is a potentially promising tool for the three-dimensional micro/nanoscale printing based on its capability to deliver low volumes of nanomaterial solution on a desired spot.
Publikováno v:
Current Applied Physics. 37:33-38
Publikováno v:
Journal of Raman Spectroscopy. 51:2305-2310
Publikováno v:
Applied Surface Science. 604:154489
Publikováno v:
Current Applied Physics. 19:1132-1135
We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile strain in the overgrown GaAs laye
Publikováno v:
Thin Solid Films. 671:147-151
We report the Raman results obtained from single GaN, GaN/AlN core–shell, and GaN/AlN branched nanowires (NWs). Polarized Raman spectra from a single GaN NW showed strong anisotropic behavior, in agreement with the Raman polarization selection rule
Publikováno v:
Applied Surface Science. 579:152208