Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tae-Young Won"'
Publikováno v:
Journal of the Korean Physical Society. 64:1483-1487
In this paper, we report a theoretical study on the electrical-optical properties of phosphorescent organic light-emitting diodes (PHOLEDs). Our simulation reveals that the refractive index of each material plays a crucial role in the emission charac
Publikováno v:
Advanced Materials Research. 629:44-48
In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(
Publikováno v:
Advanced Materials Research. 629:224-228
We report our finite element method (FEM) simulation study on the characteristic of the charge transport layer of the multi-layer structure for organic light emitting diodes (OLEDs). The physical model cover all the key physical processes in OLEDs, n
Publikováno v:
Tribology Transactions. 54:87-95
In an automobile chassis system, several environmental factors reduce the durability of automotive components. In particular, dust particles entering through rubber seals increase the friction and wear of sliding surfaces. Increased wear causes noise
Autor:
Tae Young Won, Kwan Sun Yoon
Publikováno v:
Solid State Phenomena. :1681-1684
In this paper, we present ab-initio study on the energy configurations, minimum energy path (MEP), and migration energy of neutral indium atom during diffusion in silicon crystal. From the ab-initio calculation of electronic structure, we could figur
Publikováno v:
Journal of nanoscience and nanotechnology. 15(2)
UNLABELLED In this paper, we report our numerical study on the electronic-optical properties of the organic light emitting diodes (OLEDs) devices. In order to calculate the electrical and optical characteristics such as the transport behavior of carr
Autor:
Tae Young Won, Young Wook Hwang
Publikováno v:
Journal of nanoscience and nanotechnology. 14(8)
In this paper, we report our numerical study on the electrical and optical properties in HTL/mCP/ETL multilayer organic light emitting diode (OLED) device structure. Our finite element method (FEM) model includes the transport behavior of electrons a
Publikováno v:
Microelectronic Engineering. 15:253-256
We propose a new self-aligned ITLDD process with minimum gate-drain overlap capacitance by employing a double stepped gate oxide under the overlapped gate and present our device and circuit simulation results to confirm the merits of the proposed gat
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
This paper reports Monte Carlo calculation of the bimolecular reaction of extended defects which successfully predicts both the as-implanted impurity profiles (SIMS) and the diffusion profiles for a wide range of implant and annealing conditions. We