Zobrazeno 1 - 10
of 262
pro vyhledávání: '"Tae-Sik Yoon"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-16 (2023)
Abstract Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between
Externí odkaz:
https://doaj.org/article/a57bee5a38e6429492e293f39b470b86
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Tunable multilevel gate oxide capacitance and flat‐band voltage shift characteristics in double‐floating‐gate metal–oxide–semiconductor (DFG‐MOS) capacitors are investigated for non‐volatile memory and programmable logic device
Externí odkaz:
https://doaj.org/article/154b3cbeae6f4625892949776a4ed5cb
Publikováno v:
Materials Today Advances, Vol 15, Iss , Pp 100264- (2022)
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile
Externí odkaz:
https://doaj.org/article/b428833c053047a69f8377b3b9129ddd
Publikováno v:
APL Materials, Vol 10, Iss 5, Pp 051111-051111-7 (2022)
Diffusive memristor-based threshold switching devices are promising candidates for selectors in the crossbar memory architecture. However, the reliability and uniformity of the devices are primary concerns due to uncontrolled diffusion of metal ions
Externí odkaz:
https://doaj.org/article/d643b1608b4d46f5be647327d2b44fe0
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 64, Iss No 2, Pp 525-530 (2019)
This study investigated the microstructure and high temperature oxidation properties of Fe-25Cr-20Ni-1.5Nb, HK30 alloy manufactured by metal injection molding (MIM) process. The powder used in MIM had a bi-modal size distribution of 0.11 and 9.19 μm
Externí odkaz:
https://doaj.org/article/595d56ab9d8b44678c489105f9e2caf5
Publikováno v:
APL Materials, Vol 7, Iss 7, Pp 071113-071113-7 (2019)
Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, whic
Externí odkaz:
https://doaj.org/article/5fa2f22954884d6695b80bbd6860892d
Autor:
Wonkyu Kang, Kyoungmin Woo, Hyon Bin Na, Chi Jung Kang, Tae-Sik Yoon, Kyung Min Kim, Hyun Ho Lee
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 441 (2021)
Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diod
Externí odkaz:
https://doaj.org/article/53faa7c2b16e4019bb75f2cedaada82f
Autor:
Yong-Sang Kim, Chi Jung Kang, Hyun Ho Lee, Tae-Sik Yoon, Jung-Min Kim, Kwang-Su Kim, Woon-Hyuk Baek
Publikováno v:
Sensors, Vol 10, Iss 1, Pp 765-774 (2010)
Toluene gas was successfully measured at room temperature using a device microfabricated by a nanoimprinting method. A highly uniform nanoporous thin film was produced with a dense array of titania (TiO2) pores with a diameter of 70~80 nm using this
Externí odkaz:
https://doaj.org/article/8ea636dbbb5d404e805bd592735ecebf
Autor:
DONG WAN LEE, JIN WOO KIM, SU GWAN LEE, DHIN VAN CONG, JIN CHUN KIM, HWI JUN KIM, JOONG GYEONG LIM, TAE SIK YOON
Publikováno v:
Archives of Metallurgy & Materials; 2024, Vol. 69 Issue 2, p467-470, 4p
Publikováno v:
ACS Applied Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115a5d2a345a7059d4227b4a79d0aaa4
https://doi.org/10.1021/acsaelm.3c00473
https://doi.org/10.1021/acsaelm.3c00473