Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Tae-Seung Eom"'
Autor:
Tae-Seung Eom, Choon-Ky Kang, Seung-Hyun Hwang, Jeongsu Park, Noh-Jung Kwak, Sungki Park, Yoon-Jung Ryu, Hong-Ik Kim, Ho-Hyuk Lee, Hee-Youl Lim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
In this paper, we will discuss patterning challenges of EUV lithography to apply 1xnm node DRAM. EUV lithography is positioned on essential stage because development stage for DRAM is going down sub-20nm technology node. It is time to decide how to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67dfb9a0a3d39875e02fd5eb6165d5fd
https://doi.org/10.1117/12.2011687
https://doi.org/10.1117/12.2011687
Autor:
Yoon-Jung Ryu, Hye-Jin Shin, Tae-Seung Eom, Eun-Ha Lee, Kyu-Tae Sun, Seung-Hyun Hwang, Sarohan Park, Sungki Park, Noh-Jung Kwak, Eun-Kyoung Shin, Hee-Youl Lim
Publikováno v:
SPIE Proceedings.
In recent years, DRAM technology node has shrunk below to 40nm HP (Half Pitch) patterning with significant progresses of hyper NA (Numerical Aperture) immersion lithography system and process development. Especially, the development of DPT (Double Pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670e4ba64369327cb491b79fe55576ae
https://doi.org/10.1117/12.846489
https://doi.org/10.1117/12.846489
Autor:
Hee-Youl Lim, Jun-Taek Park, Tae-Seung Eom, Eun-Ha Lee, Seung-Hyun Hwang, Sunyoung Koo, Sungki Park, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Noh-Jung Kwak, Kyu-Tae Sun, Sarohan Park
Publikováno v:
SPIE Proceedings.
In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ff76899e922ee64919b860836b640f
https://doi.org/10.1117/12.846728
https://doi.org/10.1117/12.846728
Autor:
Sarohan Park, Seung-Chan Moon, Tae-Seung Eom, Noh-Jung Kwak, Hyeong-Soo Kim, Sunyoung Koo, Byoung-Ho Nam, Yoonsuk Hyun, Sungki Park, Changreol Kim, Chang-Moon Lim, Jun-Taek Park
Publikováno v:
Alternative Lithographic Technologies.
In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30dca88d078818fb7e68567bfab3389
https://doi.org/10.1117/12.814378
https://doi.org/10.1117/12.814378
Autor:
Tae-Seung Eom, Jun-Taek Park, Chang-Moon Lim, Sungki Park, Byung-Ho Nam, Yoonsuk Hyun, Changreol Kim, Keundo Ban, Changil Oh, Sunyoung Koo, Hyeong-Soo Kim, Suk-Kyun Kim, Sarohan Park, Seung-Chan Moon, Hyunjo Yang
Publikováno v:
Alternative Lithographic Technologies.
In the field of lithography technology, EUV lithography can be a leading candidate for sub-30 nm technology node. EUVL expose system has different characteristics compared to DUV exposure system. EUV source wavelength is short and no material is tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcbd3de0e668979002b6ce1a91b27b88
https://doi.org/10.1117/12.814407
https://doi.org/10.1117/12.814407
Autor:
Sarohan Park, Seung-Chan Moon, Kilyoung Lee, Jun-Taek Park, Tae-Seung Eom, Jin-Soo Kim, Hyeong-Soo Kim
Publikováno v:
SPIE Proceedings.
In recent years, DRAM and Flash technology node has shrunk below to 45nm half pitch (HP) patterning with significant progresses of hyper numerical aperture (NA) immersion lithography system and process development. Several technologies such as extrem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec757333faea32e0a6fbed5855850df
https://doi.org/10.1117/12.804651
https://doi.org/10.1117/12.804651
Autor:
Donggyu Yim, Kiho Yang, Tae-Seung Eom, Jinyoung Choi, Hyeong-Soo Kim, Jinwoong Kim, Hye-Jin Shin, Chanha Park, Jin-Soo Kim
Publikováno v:
Optical Microlithography XXI.
New concepts about transistor structure are being introduced for sub-50nm memory products. As the memory cell design is shrinking down, conventional transistor of planar structure can not guarantee safe transistor operation. Newly introduced transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dec6e2e42c2c78fecd7c4ad687d57019
https://doi.org/10.1117/12.772446
https://doi.org/10.1117/12.772446
Autor:
Seung-Chan Moon, Jinwoong Kim, Tae-Seung Eom, Jin-Soo Kim, Yoonsuk Hyun, Chang-Moon Lim, Jun-Taek Park, Sarohan Park
Publikováno v:
SPIE Proceedings.
In this paper, we will present experimental results on 45nm node patterning of DRAM and some technical issues for polarized illumination in hyper NA imaging. First, practical k1 limit of 1.2NA ArF immersion system is investigated through experiment.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ae8e3a1adb7252f3400b38196e6ffb
https://doi.org/10.1117/12.712442
https://doi.org/10.1117/12.712442
Autor:
Tae-Seung Eom, Seung-Chan Moon, Gyu-Dong Park, Jinwoong Kim, Seo-Min Kim, Cheol-Kyu Bok, Chang-Moon Lim, Won-Kwang Ma
Publikováno v:
Optical Microlithography XVIII.
Though speculation on immersion is ignited by the possibility in realization of hyper NA lithography system which will have NA> 1.0, it is thought that the immersion era might come earlier even in ≤1.0 NA regime because of great benefit in increasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7fe22f8ef78a5fa2de3e889c6957e42
https://doi.org/10.1117/12.600455
https://doi.org/10.1117/12.600455
Autor:
Young-Sun Hwang, Seung-Chan Moon, Seo-Min Kim, Cheol-Kyu Bok, Tae-Seung Eom, Chang-Moon Lim, Jinwoong Kim, Jae-Chang Jung, Geunsu Lee, Jun-Taek Park, Kilyoung Lee
Publikováno v:
SPIE Proceedings.
512Mbit DRAM with 70 nm design rule was tailored using 0.31k1 ArF lithography technologies. Of the critical mask layers, four pattern layouts were demonstrated: brick wall, line/space, contact and line/contact patterns. For the sake of cost reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5aedc1e6322c22f35e1b1ae027449c9
https://doi.org/10.1117/12.599348
https://doi.org/10.1117/12.599348