Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Tae-Jung Ha"'
Autor:
Soo Man Seo, Hisanori Aikawa, Soo Gil Kim, Toshihiko Nagase, Yuich Ito, Tae Jung Ha, Kenichi Yoshino, Bo Kyung Jung, Tadaaki Oikawa, Ku Youl Jung, Hyun In Moon, Bum Su Kim, Fumiyoshi Matsuoka, Kosuke Hatsuda, Katsuhiko Hoya, Seiyon Kim, Sung-Hoon Lee, Myung-Hee Na, Seon Yong Cha
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93062041cdb27bb915b9189a66ed2cfe
https://doi.org/10.1109/iedm45625.2022.10019549
https://doi.org/10.1109/iedm45625.2022.10019549
Autor:
Tae Jung Ha, Kyung Wan Kim, Joo Young Moon, Jong Chul Lee, Jong-Ho Lee, Jin Kook Kim, Young Seok Ko, Woo Young Park, Byung Gu Gyun, Jae-yeon Lee, Soo Gil Kim, Yong Taek Park, Bo Mi Lee, Byoung-Ki Lee, Wonki Ju
Publikováno v:
Solid-State Electronics. 156:87-91
To develop a high voltage read margin ΔVrd, deep reset engineering and defect engineering are proposed. To realize the defect engineering, the amount of oxygen vacancy of the resistor was controlled by optimizing the material of the reservoir (RSV)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::211ae555fd29a8ba529100998be5c477
https://doi.org/10.1016/j.sse.2019.02.010
https://doi.org/10.1016/j.sse.2019.02.010
Autor:
Seoyeon Go, Byung-Gook Park, Seung Wook Ryu, Seongjae Cho, Soo Gil Kim, Jae Yeon Lee, Min-Hwi Kim, Tae Jung Ha, Youngmin Kim, Jae Yoon Lee
Publikováno v:
Vacuum. 161:63-70
In this study, a fully Si-compatible resistive-switching random-access memory (ReRAM) employing GeOx as the switching layer is fabricated, analyzed, and characterized. I–V curves and endurance characteristics have been obtained from the measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb66729815d965ea8d7ad4048e1aeb21
https://doi.org/10.1016/j.vacuum.2018.12.020
https://doi.org/10.1016/j.vacuum.2018.12.020
Autor:
Gil Seop Kim, Tae Jung Ha, Hae Jin Kim, Kyung Jean Yoon, Tae Hyung Park, Soo Gil Kim, Cheol Seong Hwang
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
To supplement resistor fail of conduction bridge random access memory (CBRAM), various device fabrication methods have been suggested such as exploiting metal alloy as a cation supply layer or electrode [1]–[2], cation doped electrolyte [3]–[4],
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ac52122e6eddf0fe17e1997a212ae2
https://doi.org/10.1109/edtm.2018.8421459
https://doi.org/10.1109/edtm.2018.8421459
Publikováno v:
Journal of The Electrochemical Society. 162:B180-B184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1a5d6ec9ba7c1fdfed30cd55ee7469
https://doi.org/10.1149/2.0971507jes
https://doi.org/10.1149/2.0971507jes
Autor:
Joo Young Moon, Jong Chul Lee, Sung-Joo Hong, Jae-yeon Lee, Jong-Ho Lee, Byoung-Ki Lee, Byung Gu Gyun, Won Ki Ju, Kyung Wan Kim, Young Seok Ko, Donggyu Yim, Bo Mi Lee, Hyun Mi Hwang, Woo Young Park, Soo Gil Kim, Tae Jung Ha, Yong Taek Park
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper, the authors report for the first time the outstanding selector performance from an innovative oxide selector. SiO2, one of conventional and common materials in semiconductor industry, was chosen as a matrix oxide material. Metal atoms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::871d769d7375cb155052640f80c03ccf
https://doi.org/10.1109/iedm.2017.8268309
https://doi.org/10.1109/iedm.2017.8268309
Autor:
Jin-Gon Ahn, Jung-Dong Hwang, Keum-Yong Park, Tae Jung Ha, Chan-Sik Jung, Suk-Bok Pae, Kang-Bo Shim, Myoung-Hee Lee, Chang-Hwan Park
Publikováno v:
Korean Journal of Breeding Science. 46:178-182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a53234a20f6c009b60fcd3e7845d29c
https://doi.org/10.9787/kjbs.2014.46.2.178
https://doi.org/10.9787/kjbs.2014.46.2.178
Autor:
Young Jae Kwon, Gil Seop Kim, Yumin Kim, Kyung Jean Yoon, Tae Jung Ha, Hae Jin Kim, Won Mo Seong, Tae Hyung Park, Dae Eun Kwon, Jung Ho Yoon, Jeong Woo Jeon, Cheol Seong Hwang, Soo Gil Kim
Publikováno v:
Advanced Functional Materials. 29:1806278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5ae14c7c403ce94ab05a2d8b78363b
https://doi.org/10.1002/adfm.201806278
https://doi.org/10.1002/adfm.201806278
Publikováno v:
Surface and Coatings Technology. 231:185-188
Hydrophobic zirconium doped alumina xerogels and zirconium doped alumina xerogels hybridized with α-Al 2 O 3 whisker were fabricated by Si(CH 3 ) 3 (trimethylsilyl substituent) modification of alcogels via ambient pressure solvothermal drying proced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86727b0b70b3605463988a4bbdb28875
https://doi.org/10.1016/j.surfcoat.2012.05.049
https://doi.org/10.1016/j.surfcoat.2012.05.049
Autor:
Tae Jung Ha, Min Hee Hong, Sin Young Jung, Hyung Hee Cho, Young Soo Lim, Sangwoo Shin, Hyung Ho Park, Won Seon Seo
Publikováno v:
Surface and Coatings Technology. 231:370-373
To obtain good properties of thermoelectric devices, low thermal conductivity and high electrical conductivity are required. But, it is difficult to control these factors individually, optimized structure is also difficult to obtain. Ordered mesoporo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe01573ba0f9cfe56852ef438091a74
https://doi.org/10.1016/j.surfcoat.2012.07.035
https://doi.org/10.1016/j.surfcoat.2012.07.035