Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tae-Jin Nam"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:1451-1454
Silicon Carbide (SiC)-based devices have been proposed to replace conventional silicon-based devices based on their physical properties and have become an active research topic. Several studies have reported a high breakdown voltage in SiC-powered de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd4082f4e25b7f55720192e73f8ba712
https://doi.org/10.1166/jnn.2019.16237
https://doi.org/10.1166/jnn.2019.16237
Publikováno v:
Solid-State Electronics. 140:23-28
In order to enhance specific on-resistance (Ron,sp), the trench gate structure was also introduced into 4H-SiC MOSFET as Si MOSFET. But the 4H-SiC trench gate has worse off-state characteristics than the Si trench gate due to the incomplete gate oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdebbc30224c0002d39a5f0681cb315
https://doi.org/10.1016/j.sse.2017.10.033
https://doi.org/10.1016/j.sse.2017.10.033
Autor:
Tai Young Kang, Tae Jin Nam, Heon Seok Chung, Ey Goo Kang, Young Sung Hong, Myoung Hwan Lee, Sin Su Kyoung
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:12784-12787
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f165e868eeb7f363922fbe67ca50b886
https://doi.org/10.1166/jnn.2016.13698
https://doi.org/10.1166/jnn.2016.13698
Autor:
Tae Jin Nam, Tai Young Kang, Ey Goo Kang, Young Sung Hong, Sin Su Kyoung, Hun-Seok Chung, Myong Hwan Lee, Sang Heon Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:12936-12938
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb6a28afd4bd678023fbc6bada47e31
https://doi.org/10.1166/jnn.2016.13700
https://doi.org/10.1166/jnn.2016.13700
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 25:266-269
Maple Semiconductor, Incorporated, Bucheon 421-150, Korea(Received March 20, 2012; Revised March 24, 2012; Accepted March 24, 2012)Abstract: The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e72bbca00898ac6ac0169c33e6f74e8
https://doi.org/10.4313/jkem.2012.25.4.266
https://doi.org/10.4313/jkem.2012.25.4.266
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 25:165-169
Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c776c028785a9e7d3e5dbf92fcc00cd
https://doi.org/10.4313/jkem.2012.25.3.165
https://doi.org/10.4313/jkem.2012.25.3.165
Autor:
Tae-Jin Nam, Ey-Goo Kang
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24:351-354
This paper was carried about thermal analysis for high efficiency point contact solar cell. Therefore, we carried about 2-D device and process simulator according to design and process parameters. As a result of simulations, power transfer efficiency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a53949186574e7097b4dabc0949da3d
https://doi.org/10.4313/jkem.2011.24.5.351
https://doi.org/10.4313/jkem.2011.24.5.351
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:273-279
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc244f28488213245638b72105a8b4c8
https://doi.org/10.4313/jkem.2010.23.4.273
https://doi.org/10.4313/jkem.2010.23.4.273
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:183-189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3dbead0c1d3b9576860d04608ffdbf
https://doi.org/10.4313/jkem.2010.23.3.183
https://doi.org/10.4313/jkem.2010.23.3.183
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783540448914
ICIAR (1)
ICIAR (1)
In this paper, we present an optical flow based frame rate up-conversion method for ultrasound images. The conventional mechanical scan method for multi-planar images has a slow frame rate, thus frame interpolation is desirable for smooth display. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7493dcb537287142f0ff0a03404d41d2
https://doi.org/10.1007/11867586_72
https://doi.org/10.1007/11867586_72
