Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tae-Hoon Huh"'
Publikováno v:
MRS Advances. 7:1364-1368
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0665165a4699ae1501dbff8444b79098
https://doi.org/10.1557/s43580-022-00469-y
https://doi.org/10.1557/s43580-022-00469-y
Publikováno v:
MRS Advances. 7:1431-1434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff11a569aa937d0df08b9e0744b349a
https://doi.org/10.1557/s43580-022-00378-0
https://doi.org/10.1557/s43580-022-00378-0
Publikováno v:
MRS Advances. 7:1438-1440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d51ba17eeb13833d52d50568e9d937d
https://doi.org/10.1557/s43580-022-00486-x
https://doi.org/10.1557/s43580-022-00486-x
Autor:
Tae-Hoon Huh, Jae-Sang Ro
Publikováno v:
Electronic Materials Letters. 7:167-170
As devices are scaled down to sub-100 nm size, additional implant parameters such as instantaneous dose rate and wafer temperature as well as dose, energy, and implant angle have become increasingly important for controlling dopant profiles. The peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ae8c8fc7b23e7187119c90ab9f976c
https://doi.org/10.1007/s13391-011-0614-9
https://doi.org/10.1007/s13391-011-0614-9
Autor:
Byung-Jae Kang, Seulah Kim, Geum-Joo Ra, Dong-Chul Park, Tae-Hoon Huh, Ronald N. Reece, Shin-Woo Kang, Jong-Oh Lee, Min-Sung Lee, Leonard M. Rubin
Publikováno v:
Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).
The temperature effect for buried channel PMOS transistor characteristics was investigated. Generally, only dose, energy and implant angle have been considered as the major parameters for process matching between different high current implanters in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f8a7e0336ab9a2f20f83bb5604a334
https://doi.org/10.1109/iwjt.2008.4540013
https://doi.org/10.1109/iwjt.2008.4540013
Autor:
Tae-Hoon Huh, Byung-Jae Kang, Geum-Joo Ra, Kyung-Won Lee, Steve Kim, Ronald N. Reece, Leonard M. Rubin, Michael S. Ameen, Won-Min Moon, Min-Sung Lee, Young-Ho Lee, Jong-Oh Lee, Dong-Chul Park, Jung-Youn Lim, Youn-Soo Kim, Jae-Sang Ro, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
The temperature effect for buried channel PMOS transistor characteristics was investigated. Generally, only dose, energy and implant angle have been considered as the major parameters for process matching between different high current implanters in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631df2e06f94c1dc7395429ec3bf3452
https://doi.org/10.1063/1.3033690
https://doi.org/10.1063/1.3033690
Autor:
Kyung Won Lee, Jin Ku Lee, Jae Geun Oh, Tae Hoon Huh, Min Ae Ju, Seung Joon Jeon, Ja Chun Ku, Sung Ki Park, Steve Kim, Dae Ho Yoon, Geum Joo Ra, Mark A. Harris, Ronald N. Reece, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Basic characteristics of ClusterBoron™ (B18H22) implantation were investigated for improving contact resistance in DRAM devices. Generally, 49BF2 has been widely used for contact implant application in DRAM manufacturing because of its higher produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d40a7de625665ab508fdb3dc1d8c81
https://doi.org/10.1063/1.3033673
https://doi.org/10.1063/1.3033673
Autor:
W. A. Krull, J. K. Lee, S. H. Pyi, T. W. Jung, H. T. Cho, Tae-Hoon Huh, Sun‐Hwan Hwang, Steve Kim, Y. H. Joo, Dahae Kim, D. S. Sheen, J. G. Oh, Y. S. Sohn, H. J. Cho
Publikováno v:
AIP Conference Proceedings.
Conventional B+ or BF2+implantation has a limitation in terms of throughput and energy contamination. Boron cluster implantation is one alternative to solve this problem. We have investigated the characteristics of B18HX+ cluster ion implantation usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588905c1d1a6738755430eb98858f2f0
https://doi.org/10.1063/1.2401485
https://doi.org/10.1063/1.2401485
Autor:
Jae-Geun Oh, Yoon-Taek Jang, Jong-Choul Kim, Byung Jin Cho, Kil-Ho Lee, Jae-Sang Ro, Tae-Hoon Huh, Nam-Hoon Cho
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
MeV ion implantation has gained much attention in the field of CMOS retrograde well engineering. Damage formation by high energy implantation has a significant characteristics in that the lattice damage is concentrated near R/sub P/ and isolated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b94b26c7b6fe3348b622f19ee7e802
https://doi.org/10.1109/iit.1996.586492
https://doi.org/10.1109/iit.1996.586492
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::953308afd0241c2a6abf184c9a0a6158
https://doi.org/10.1109/iit.1998.813837
https://doi.org/10.1109/iit.1998.813837