Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Tae-Earn Shim"'
Autor:
Hwang Yun-Tae, Dowon Shun, Jae Hyeok Park, Keun-Hee Han, Dal-Hee Bae, Jong Ryeol Kim, Tae-Earn Shim, Dong-Ho Lee
Publikováno v:
Powder Technology. 343:747-753
A simple and effective method of fine particle sampling at the convection pass inlet in a boiler that burns solid recovered fuel is developed and demonstrated. The fine particles, which are assumed to be mineral salt in flue gas, easily combine with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898ed7c72f4aaddebb04008e2e26d478
https://doi.org/10.1016/j.powtec.2018.11.053
https://doi.org/10.1016/j.powtec.2018.11.053
Autor:
Dowon Shun, Dal-Hee Bae, Jong-Seon Shin, Jeong Hwan Lee, Tae-Earn Shim, Keun-Hee Han, Jae Hyeok Park, Dong-Ho Lee
Publikováno v:
Fuel. 236:792-802
Combustion of SRF (solid recycled fuel) and biomass with potassium (K), sodium (Na), and chlorine (Cl) contents can result in operational problems such as hard deposit formation and convection pass tube corrosion. Two types of commercially available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8318842aab91ba260680cccab81f5946
https://doi.org/10.1016/j.fuel.2018.09.020
https://doi.org/10.1016/j.fuel.2018.09.020
Publikováno v:
Journal of The Electrochemical Society. 142:571-576
We have studied the characteristics of the mixture of HNO 3 , HF, and H 2 O 2 chemicals called the controlled slight etch (CSE) solution as an effective wafer cleaning solution. The silicon etch rate in the CSE solution was not dependent on HF concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81635b7dad276eea80b75bf73d6231be
https://doi.org/10.1149/1.2044100
https://doi.org/10.1149/1.2044100
Autor:
Byoung Hun Lee, Gi-ho Cha, Kye-hee Yeom, Joon-hee Lee, Woo-Tag Kang, Yun-Gi Kim, Kyu-Charn Park, Sang-Cheol Lee, Chang-Gyu Hwang, Tae-Earn Shim, Duck-Hyung Lee, Sunil Yu, Sang-In Lee, Il-Kwon Kim
Publikováno v:
International Electron Devices Meeting. Technical Digest.
A fully planarized 16 Mb SOI DRAM has been successfully fabricated featuring pattern-bonded SOI (PBSOI), CMP processes, STI (Shallow Trench Isolation) and the silicon-on-capacitor (SOC) structure with 0.3 um technology using i-line lithography. The f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e635a0c760ad0531237f2ba5d7439d6
https://doi.org/10.1109/iedm.1996.554056
https://doi.org/10.1109/iedm.1996.554056
Autor:
Jong Woo Park, Ki Nam Kim, Kang Yoon Lee, Nam Soo Kang, Jae Kwan Park, D. J. Jung, Tae Earn Shim
Publikováno v:
Japanese Journal of Applied Physics. 35:865
A 0.25 µm complementary metal oxide semiconductor field effect transistor (CMOSFET) has been developed using halo implantation for 1 Gbit dynamic random access memory (DRAM). This technology features a source/drain implantation followed by a halo im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c823dd98e2da7f14ef8d697cb581c4e2
https://doi.org/10.1143/jjap.35.865
https://doi.org/10.1143/jjap.35.865
Autor:
Il-Kwon Kim, Woo-Tag Kang, Joon-Hee Lee, Sunil Yu, Sang-Cheol Lee, Kyehee Yeom, Yun-Gi Kim, Duck-Hyung Lee, Giho Cha, Byoung Hun Lee, Sang-In Lee, Kyu-Charn Park, Tae-Earn Shim, Chang-Gyu Hwang
Publikováno v:
International Electron Devices Meeting Technical Digest; 1996, p605-608, 4p
Autor:
Tadatsugu Itoh, Tae Earn Shim
Publikováno v:
Journal of Applied Physics. 65:486-490
Undoped GaAs (100) wafers were implanted with 150‐keV Sn+ and/or 50‐keV Si+ ions to doses of 5×1013–1×1014/cm2 at room temperature, and annealed at 850 °C for 15 min. The backscattering spectra showed a sufficient crystalline recovery at thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5937ba7607f3a7a7f1c8f3fe87256be6
https://doi.org/10.1063/1.343130
https://doi.org/10.1063/1.343130
Publikováno v:
Journal of Applied Physics. 61:4635-4639
Rutherford backscattering spectrometry, transmission electron micrography, and the Hall measurement have been used to investigate the lattice site location, residual defects, and activation behavior of Sn‐implanted GaAs. Undoped GaAs (100) wafers w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0991f9f7a14ab8fd5444bcf7b0ba49
https://doi.org/10.1063/1.338374
https://doi.org/10.1063/1.338374
Publikováno v:
Applied Physics Letters. 48:641-643
A Si film formed by vacuum deposition as an annealing cap for a Si‐implanted GaAs substrate has been studied. GaAs substrates implanted with 3×1013 Si ions/cm2 at 100 keV were furnace annealed with Si caps at temperatures between 750 and 900 °C f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ee75a8c82fe88d398b6aad5d2f138d
https://doi.org/10.1063/1.96730
https://doi.org/10.1063/1.96730
Autor:
Jung, Dong Jin, Park, Jae Kwan, Lee, Kang Yoon, Kang, Nam Soo, Kim, Ki Nam, Tae Earn Shim, Tae Earn Shim, Jong Woo Park, Jong Woo Park
Publikováno v:
Japanese Journal of Applied Physics; February 1996, Vol. 35 Issue: 2 p865-865, 1p