Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Tae-Chan Kim"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1345-1349 (2020)
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are eval
Externí odkaz:
https://doaj.org/article/a1a38eebe6fb424a8ca11751895de462
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1345-1349 (2020)
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are eval
Autor:
Tae-Chan Kim
Publikováno v:
IEEE Consumer Electronics Magazine. 3:30-35
This article presents several wide dynamic range (WDR) technologies for CMOS image sensors. In photography, dynamic range is the range between the maximum and minimum measurable light intensities. The varying degree of light intensity depends on the
Publikováno v:
Analog Integrated Circuits and Signal Processing. 79:183-189
In this Letter, 400 MHz---1.5 GHz all digital integer-N PLL with a reference spur reduction is proposed. A reference spur is occurred by updating DCO control code at every reference clock period. To reduce a reference spur component, the phase detect
Publikováno v:
IEEE Transactions on Consumer Electronics. 60:18-22
In this paper, a novel image enhancement system for a wide-angle lens camera is presented. The proposed system consists of; i) lens distortion correction using space-varying interpolation kernels and ii) image restoration based on the local self-simi
Publikováno v:
Current Applied Physics. 5:227-230
In recent years, power consumption has become one of the most critical design concerns in designing VLSI systems. The reduction of power consumption is inevitably required by the emergence of highly efficient and fast systems, which include CPU (cent
Publikováno v:
Journal of the Korean Physical Society. 43:858-862
Autor:
Philip J. Oldiges, Hemanth Jagannathan, Kangguo Cheng, Christopher Prindle, C.-C. Yeh, R. Divakaruni, S. Kanakasabaphthy, Derrick Liu, Sean D. Burns, P. Montanini, T. Gow, Huiming Bu, Abhijeet Paul, Terry A. Spooner, Richard G. Southwick, Jin Cho, M. Celik, Mukesh Khare, Donald F. Canaperi, Young-Kwan Park, H. Mallela, Ravikumar Ramachandran, Bomsoo Kim, Dinesh Gupta, Balasubramanian S. Pranatharthi Haran, R. Kambhampati, M. Weybright, W. Yang, Vamsi Paruchuri, Tae-Chan Kim, R. Sampson, K. Kim, D. Chanemougame, John Iacoponi, Jay W. Strane, Ruilong Xie, D.I. Bae, Injo Ok, Matthew E. Colburn, T. Hook, Kang-ill Seo, Lars W. Liebmann, V. Sardesai, Hoon Kim, Neeraj Tripathi, H. Shang, M. Mottura, Reinaldo A. Vega, B. Hamieh, D. McHerron, Theodorus E. Standaert, Ju-Hwan Jung, S. Nam, E. Alptekin, Soon-Cheon Seo, Dechao Guo, J. G. Hong, Gen Tsutsui, Andreas Scholze, J. Jenq, Xiao Sun, Walter Kleemeier, James H. Stathis, Geum-Jong Bae
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI
Publikováno v:
Geomechanics from Micro to Macro ISBN: 9781138027077
Geomechanics from Micro to Macro
Geomechanics from Micro to Macro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdbba7ca38d5af3de23d253b70f2501d
https://doi.org/10.1201/b17395-295
https://doi.org/10.1201/b17395-295
Autor:
P. Lichtsteiner, Jun S. Kim, Tobias Delbrück, Kwangbum Park, Hyunsurk Ryu, Kyoobin Lee, R Berner, Jun Lee, Tae-Chan Kim
Publikováno v:
The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014).
This paper presents the design of a dynamic vision sensor for mobile applications. The sensor features a standby mode with less than 250uW of power dissipation. The sensor changes operation mode between standby and normal operation itself depending o