Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Tae Soo Jung"'
Autor:
Jin Hyeok Lee, Heesoo Lee, Hyun Jae Kim, Hee Jun Kim, Kyung Ho Park, Won Kyung Min, Tae Soo Jung
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1298-1301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5573d6fb9426ef8ca43011f4f3d5f59
https://doi.org/10.1002/sdtp.13172
https://doi.org/10.1002/sdtp.13172
Autor:
Hyun Jae Kim, Kyung Ho Park, Hee Jun Kim, Jin Hyeok Lee, Won Kyung Min, Tae Soo Jung, Sung Pyo Park
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1279-1282
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f35834be44708e0b7d113d443efacf
https://doi.org/10.1002/sdtp.13167
https://doi.org/10.1002/sdtp.13167
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1286-1289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9211989d4637a113164f0a6d6f19ba
https://doi.org/10.1002/sdtp.13169
https://doi.org/10.1002/sdtp.13169
Autor:
Soo Young Yoon, Seok-Woo Lee, Hee Jun Kim, Jin Hyeok Lee, Jun Hyeon Bae, Hyun Jae Kim, Kwon-Shik Park, Dongwoo Kim, In-Byeong Kang, Tae Soo Jung, Sung Pyo Park
Publikováno v:
ACS applied materialsinterfaces. 12(34)
Copper(I) oxide (Cu2O), which is obtained from copper(II) oxide (CuO) through a reduction process, is a p-type oxide material with a band gap of 2.1–2.4 eV. However, the switching performance of ty...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::607d97943e8bb60b07df5a623295a989
https://pubmed.ncbi.nlm.nih.gov/32706244
https://pubmed.ncbi.nlm.nih.gov/32706244
Autor:
Chan Bae Jeong, Jeong Woo Park, Won Gi Kim, Young Jun Tak, Jusung Chung, Hyun Jae Kim, Tae Soo Jung, Heesoo Lee, Ki Soo Chang
Publikováno v:
Journal of Information Display. 18:131-135
Proposed herein is a new technique of activation for the backplane of low-temperature amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by applying a bias voltage to gate, sou...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6708ac588605d0e0fe2c120d1faf9b27
https://doi.org/10.1080/15980316.2017.1322152
https://doi.org/10.1080/15980316.2017.1322152
Autor:
Si Joon Kim, Joohye Jung, Jae Won Na, Mardhiah Muhamad Sabri, Hyun Jae Kim, Doo Hyun Yoon, Tae Soo Jung
Publikováno v:
IEEE Transactions on Electron Devices. 64:515-520
We investigated a novel deoxyribonucleic acid (DNA) sensing system based on low-temperature solution-processed In–Zn–O (IZO) thin-film transistors (TFTs) suggesting an alternative evolutionary line to the traditional DNA biosensors. The IZO TFTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58f8811da4c4723d0763c13c00a6afd8
https://doi.org/10.1109/ted.2016.2635155
https://doi.org/10.1109/ted.2016.2635155
Autor:
Tae Soo Jung, Young Jun Tak, Hyun Jae Kim, Sung Pyo Park, Jeong Woo Park, Won Gi Kim, Heesoo Lee
Publikováno v:
Journal of Information Display. 17:73-78
Activation using the simultaneous UV-thermal (U-T) treatment of sputter-processed InGaZnO (IGZO) thin-film transistors (TFTs) is suggested. This treatment was performed to lower the activation temperature from 300°C (thermal activation alone) to 150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a6fc89268e0db31b5465ec742be4e8
https://doi.org/10.1080/15980316.2016.1172524
https://doi.org/10.1080/15980316.2016.1172524
Publikováno v:
ACS applied materialsinterfaces. 10(51)
We investigated a method to simultaneously improve the mobility and reliability of solution-processed zinc tin oxide thin film transistors (ZTO TFTs) using a dual-functional potassium superoxide precursor. Potassium cations in the potassium superoxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::946dcde45938ab53ca72c4dcad1934fa
https://pubmed.ncbi.nlm.nih.gov/30511830
https://pubmed.ncbi.nlm.nih.gov/30511830
Publikováno v:
ACS applied materialsinterfaces. 10(43)
In recent years, high-performance amorphous oxide semiconductor thin-film transistor (AOS TFT) technology is required to meet the increasing demand for novel displays, such as rollable, transparent, or augmented reality head-up displays. It has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d225580326351cc46f9fcdc9de82285
https://pubmed.ncbi.nlm.nih.gov/30298732
https://pubmed.ncbi.nlm.nih.gov/30298732
Autor:
Jin Hyeok Lee, Tae Soo Jung, Heesoo Lee, Sung Pyo Park, Hyun Jae Kim, Hee Jun Kim, Dongwoo Kim
Publikováno v:
ACS applied materialsinterfaces. 10(38)
We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82dc6615bc1a21b4a1085160f89a0be8
https://pubmed.ncbi.nlm.nih.gov/30157628
https://pubmed.ncbi.nlm.nih.gov/30157628