Výsledky vyhledávání - "Tae Jun Yang"

Akademický článek

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

Autor: Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, Dae Hwan Kim

Publikováno v: IEEE Access, Vol 12, Pp 28531-28537 (2024)

Obtaining symmetrical and highly linear synapse weight update characteristics of analog resistive switching devices is critical for attaining high performance and energy efficiency of the neural network system. In this work, based on the two-terminal

Externí odkaz: https://doaj.org/article/83132ecb329e4de7a490a76eceb416e7

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Akademický článek

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Autor: Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)

Abstract Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and v

Externí odkaz: https://doaj.org/article/403e73d6d6654c688ba011d2cb313128

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Akademický článek

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

Autor: Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim

Publikováno v: Nanomaterials, Vol 12, Iss 20, p 3582 (2022)

In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose

Externí odkaz: https://doaj.org/article/14749cd96a504464be18e4499a50e777

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Akademický článek

Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content

Autor: Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim

Publikováno v: Micromachines, Vol 13, Iss 10, p 1630 (2022)

This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the appli

Externí odkaz: https://doaj.org/article/6b4818a06eb14b38a68d8dd4a192f284

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Akademický článek

The Effects of Pulsatilla Koreana NAKAI Pharmacopuncture Therapy on the Chunchu (ST25) for Dextran Sulfate Sodium-Induced Colitis in Mice

Autor: Tae Jun Yang, Sang Jun Jeong, Dae Hwan Youn, Tung Shuen Wei

Publikováno v: Journal of Acupuncture Research, Vol 35, Iss 1, Pp 11-20 (2018)

Background This research was performed to investigate the effects of Pulsatilla Koreana NAKAI pharmacopuncture (PPA) therapy on intestinal disease in rats with dextran sulfate sodium (DSS)-induced colitis. Methods The subjects were divided into five

Externí odkaz: https://doaj.org/article/dd3c4f71a3234c6baea89f763e764caf

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