Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Tae Jun Seok"'
Autor:
Jeongwoo Park, Hyobin Eom, Seong Hwan Kim, Tae Jun Seok, Tae Joo Park, Sang Woon Lee, Bonggeun Shong
Publikováno v:
Materials Today Advances, Vol 12, Iss , Pp 100195- (2021)
Two-dimensional electron gases (2DEGs) localized at oxide heterointerfaces can potentially be used in applications associated with the design of novel electronic device architectures. Recent studies have reported that atomic layer deposition (ALD) of
Externí odkaz:
https://doaj.org/article/9bfadf3005aa462e9017f747f2c3be09
Autor:
Dae Woong Kim, Jin-Young Jung, Dae Hyun Kim, Jin-Young Yu, Jae Hyuck Jang, Hyun Soo Jin, Tae Jun Seok, Yo-Sep Min, Jung-Ho Lee, Tae Joo Park
Publikováno v:
ACS Applied Materials & Interfaces. 14:14137-14145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735a5fa5906555ad1512646d86c7b5e8
https://doi.org/10.1021/acsami.1c22273
https://doi.org/10.1021/acsami.1c22273
Autor:
Ji Hyeon Choi, Hye Ju Kim, Sung Min Kim, Tae Jun Seok, Tae Joo Park, Dae Hyun Kim, Deok-Yong Cho, Yuhang Liu, Jae Hyuck Jang, Sang Woon Lee
Publikováno v:
Chemistry of Materials. 32:7662-7669
A two-dimensional electron gas (2DEG) was formed at the interface of an ultrathin Al2O3/TiO2 heterostructure that was fabricated using atomic layer deposition (ALD) at a low temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6930d22a7a3892eaf390fff12b8a9a4
https://doi.org/10.1021/acs.chemmater.0c01572
https://doi.org/10.1021/acs.chemmater.0c01572
Publikováno v:
Applied Surface Science. 491:83-87
S passivation of a HfO2 film on an InP substrate is demonstrated using annealing in H2S ambient either before or after ALD of the HfO2 film. We examined the resulting distribution and chemical state of the incorporated S both in the HfO2 film and at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af11f24d3c36bdc6fca8b48281870972
https://doi.org/10.1016/j.apsusc.2019.06.100
https://doi.org/10.1016/j.apsusc.2019.06.100
Autor:
R. Nandi, Pravin S. Pawar, Tae-Jun Seok, Won-Jin Moon, Jin Hyeok Kim, Vijay Karade, Jaeyeong Heo, Jun Sung Jang, Tae Joo Park, Jae Yu Cho
Publikováno v:
Journal of Alloys and Compounds. 895:162651
Atomic layer deposition (ALD) has been used to synthesize earth-abundant and non-toxic ZnSnO thin films as potential replacements for CdS buffer layers in thin-film solar cells. In this study, ALD ZnSnO films with various Zn/(Zn+Sn) ratios ranging fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a06ff8adbe3c1c9caac11c08d4b01ee
https://doi.org/10.1016/j.jallcom.2021.162651
https://doi.org/10.1016/j.jallcom.2021.162651
Autor:
Jae Hyuck Jang, Sung Min Kim, Soo Bin Kim, Tae Jun Seok, Sang Woon Lee, Dae Hyun Kim, Deok-Yong Cho, Yuhang Liu, Tae Joo Park, Hae Jun Jung
Publikováno v:
ACS Nano. 12:10403-10409
We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al2O3/TiO2 heterostructure interface grown via atomic layer deposition (ALD) on a SiO2/Si substrate without using a single crystal su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd322015e308e725793b5aa1f8eabe6
https://doi.org/10.1021/acsnano.8b05891
https://doi.org/10.1021/acsnano.8b05891
Autor:
Dae Woong Kim, Jin-Young Jung, Dae Hyun Kim, Jin-Young Yu, Jae Hyuck Jang, Hyun Soo Jin, Tae Jun Seok, Yo-Sep Min, Jung-Ho Lee, Tae Joo Park
Publikováno v:
ACS Applied Materials & Interfaces; 30/3/2022, Vol. 14 Issue 12, p14137-14145, 9p
Autor:
Hye Ju Kim, Sung Min Kim, Sang Woon Lee, Hae Jun Jung, Ji-Yong Park, Tae Joo Park, Tae Jun Seok, Seong Hwan Kim
Publikováno v:
ACS applied materialsinterfaces. 11(33)
This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive bridge random access memory using two-dimensional electron gas (2DEG) at the interface of an Al2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6bfd6f461e4ec8b04ca99a667be19e7
https://pubmed.ncbi.nlm.nih.gov/31343152
https://pubmed.ncbi.nlm.nih.gov/31343152
Autor:
Jung-Yeon Won, Tae Jun Seok, Hyun Soo Jin, Cheol Seong Hwang, Dae Hyun Kim, Tae Joo Park, Youngjin Cho, Sang-Moon Lee, Seong Keun Kim, Jong-Bong Park, Dae Woong Kim
Publikováno v:
Journal of Materials Chemistry C. 4:850-856
The effects of sulfur passivation of the Ge substrate were studied through (NH4)2S solution treatment and the rapid thermal annealing under an H2S atmosphere prior to atomic-layer-deposition (ALD) of HfO2. While a chemically unstable and uneven sulfu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4100455ede006418c03ff3ed1454f35
https://doi.org/10.1039/c5tc03267a
https://doi.org/10.1039/c5tc03267a
Autor:
Dae Woong Kim, Hyun Soo Jin, Seong Keun Kim, Dae Hyun Kim, Tae Jun Seok, Cheol Seong Hwang, Tae Joo Park, Youngjin Cho, Jong-Bong Park, Sang-Moon Lee, Dong-Jin Yun
Publikováno v:
Applied Surface Science. 357:2306-2312
Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H2S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bdadc9627f341d888da5d46ac1a524e
https://doi.org/10.1016/j.apsusc.2015.09.232
https://doi.org/10.1016/j.apsusc.2015.09.232