Zobrazeno 1 - 10
of 364
pro vyhledávání: '"Tadjer, Marko J"'
Autor:
Lundh, James Spencer, Cress, Cory, Jacobs, Alan G., Cheng, Zhe, Masten, Hannah N., Spencer, Joseph A., Sasaki, Kohei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Mastro, Michael A.
Publikováno v:
Journal of Applied Physics; 12/14/2024, Vol. 136 Issue 22, p1-11, 11p
Autor:
Kelly, Frank P., Landi, Matthew M., Vesto, Riley E., Tadjer, Marko J., Hobart, Karl D., Kim, Kyekyoon
Publikováno v:
Journal of Applied Physics; 10/21/2024, Vol. 136 Issue 15, p1-8, 8p
Publikováno v:
J. Vac. Sci. Technol. A 39, 023412 (2021)
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the elect
Externí odkaz:
http://arxiv.org/abs/2105.03758
Autor:
Mastro, Michael A., Eddy, Jr., Charles R., Tadjer, Marko J., Hite, Jennifer K., Kim, Jihyun, Pearton, Stephen J.
Publikováno v:
J. Vac. Sci. Technol. A 39, 013408 (2021)
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates prod
Externí odkaz:
http://arxiv.org/abs/2105.03741
Autor:
Mastro, Michael A., Anderson, Travis J., Tadjer, Marko J., Kub, Francis J., Hite, Jennifer K., Kim, Jihyun, Eddy Jr, Charles R.
Publikováno v:
physica status solidi (c) 11(3-4), 2014
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane
Externí odkaz:
http://arxiv.org/abs/2009.02144
Autor:
Cheng, Zhe, Wheeler, Virginia D., Bai, Tingyu, Shi, Jingjing, Tadjer, Marko J., Feygelson, Tatyana, Hobart, Karl D., Goorsky, Mark S., Graham, Samuel
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower th
Externí odkaz:
http://arxiv.org/abs/1908.08665
Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conduct
Externí odkaz:
http://arxiv.org/abs/1901.02961
Autor:
Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D., Feygelson, Tatyana I., Tadjer, Marko J., Pate, Bradford B., Foley, Brian M., Yates, Luke, Pantelides, Sokrates T., Cola, Baratunde A., Goorsky, Mark, Graham, Samuel
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly
Externí odkaz:
http://arxiv.org/abs/1807.11400
Autor:
Jacobs, Alan G., Feigelson, Boris N., Lundh, James S., Spencer, Joseph A., Freitas, Jaime A., Gunning, Brendan P., Kaplar, Robert J., Zhang, Yuhao, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Nov2024, Vol. 221 Issue 21, p1-6, 6p
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