Zobrazeno 1 - 10
of 497
pro vyhledávání: '"Tadjer, Marko"'
Autor:
Aller, Henry T., Pfeifer, Thomas W., Mamun, Abdullah, Huynh, Kenny, Tadjer, Marko, Feygelson, Tatyana, Hobart, Karl, Anderson, Travis, Pate, Bradford, Jacobs, Alan, Lundh, James Spencer, Goorsky, Mark, Khan, Asif, Hopkins, Patrick, Graham, Samuel
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered i
Externí odkaz:
http://arxiv.org/abs/2408.08076
Autor:
Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S.J.
The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determin
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A85021
https://ul.qucosa.de/api/qucosa%3A85021/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A85021/attachment/ATT-0/
Publikováno v:
J. Vac. Sci. Technol. A 39, 023412 (2021)
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the elect
Externí odkaz:
http://arxiv.org/abs/2105.03758
Autor:
Mastro, Michael A., Eddy, Jr., Charles R., Tadjer, Marko J., Hite, Jennifer K., Kim, Jihyun, Pearton, Stephen J.
Publikováno v:
J. Vac. Sci. Technol. A 39, 013408 (2021)
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates prod
Externí odkaz:
http://arxiv.org/abs/2105.03741
Long-range spatial coherence can be induced in thermal emitters by embedding a periodic grating into a material supporting propagating polaritons or dielectric modes. However, the emission angle and frequency cannot be defined simultaneously and uniq
Externí odkaz:
http://arxiv.org/abs/2012.08611
Autor:
Mastro, Michael A., Anderson, Travis J., Tadjer, Marko J., Kub, Francis J., Hite, Jennifer K., Kim, Jihyun, Eddy Jr, Charles R.
Publikováno v:
physica status solidi (c) 11(3-4), 2014
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane
Externí odkaz:
http://arxiv.org/abs/2009.02144
Autor:
Yates, Luke, Cheng, Zhe, Bai, Tingyu, Hobart, Karl, Tadjer, Marko, Feygelson, Tatyana I., Pate, Bradford B., Goorsky, Mark, Graham, Samuel
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as
Externí odkaz:
http://arxiv.org/abs/2006.12464
Autor:
Folland, Thomas G., Lu, Guanyu, Bruncz, A., Nolen, J. Ryan, Tadjer, Marko, Caldwell, Joshua D.
Epsilon near zero modes offer extreme field enhancement that can be utilized for developing enhanced sensing schemes. However, demonstrations of enhanced spectroscopies have largely exploited surface polaritons, mostly due to the challenges of coupli
Externí odkaz:
http://arxiv.org/abs/2001.02721
Autor:
Cheng, Zhe, Wheeler, Virginia D., Bai, Tingyu, Shi, Jingjing, Tadjer, Marko J., Feygelson, Tatyana, Hobart, Karl D., Goorsky, Mark S., Graham, Samuel
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower th
Externí odkaz:
http://arxiv.org/abs/1908.08665