Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Taddiken, A.H."'
Publikováno v:
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit Technical Digest 1988; 1988, p239-242, 4p
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting; 1993, p419-422, 4p
Publikováno v:
Technical Digest, International Electron Devices Meeting; 1988, p778-781, 4p
Publikováno v:
1993 Proceedings of the Twenty-Third International Symposium on Multiple-Valued Logic; 1993, p164-169, 6p
Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K.
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide & Related Materials (IPRM); 1994, p583-586, 4p
Publikováno v:
IEEE Transactions on Electron Devices; 1990, Vol. 37 Issue 3, p548-555, 8p
Publikováno v:
IEEE Journal of Solid-State Circuits; 1990, Vol. 25 Issue 4, p961-970, 10p
Publikováno v:
IEEE Journal of Solid-State Circuits; 1987, Vol. 22 Issue 2, p262-267, 6p
Publikováno v:
IEEE Transactions on Electron Devices; 1990, Vol. 37 Issue 6, p1537-1539, 3p
Autor:
Plumton, D.L., Yuan, H.T., Kim, T.S., Taddiken, A.H., Ley, V., Kollman, R.L., Lagnado, I., Johnson, L.
Publikováno v:
IEEE Electron Device Letters; 1995, Vol. 16 Issue 4, p142-144, 3p