Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tadayoshi Deguchi"'
Autor:
Yoshiyuki Sakai, Takashi Shinohe, Takashi Tsutsumi, Naoki Kumagai, Akihiro Otsuki, Dai Okamoto, K. Asano, Mitsuo Okamoto, Tetsuo Hatakeyama, Masaaki Miyajima, Yasunori Tanaka, Hiroyuki Fujisawa, Hitoshi Kimura, Mitsuru Sometani, Shinsuke Harada, Yoshiyuki Yonezawa, Kenji Fukuda, Kazuto Takao, Tomohisa Kato, Tadayoshi Deguchi, Kensuke Takenaka, Toru Izumi, Tomonori Mizushima, M. Yoshikawa, Masayuki Arai, Shinichiro Matsunaga, Hajime Okumura, Tsunenobu Kimoto, Tsukasa Hayashi, Koji Nakayama, Manabu Takei
Publikováno v:
Materials Science Forum. :842-846
Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fcfd133c0fb90523d8ff9d7b2158d0
https://doi.org/10.4028/www.scientific.net/msf.821-823.842
https://doi.org/10.4028/www.scientific.net/msf.821-823.842
Autor:
Yasunori Tanaka, Shinichiro Matsunaga, Takashi Shinohe, Tomonori Mizushima, Katsunori Asano, Shuji Katakami, Kazuto Takao, Kenji Fukuda, Syuuji Ogata, Hajime Okumura, Toru Izumi, Tomohisa Kato, Manabu Arai, Hiroyuki Fujisawa, Kensuke Takenaka, Dai Okamoto, Tadayoshi Deguchi, Mitsuo Okamoto, Toshihiko Hayashi, Yoshiyuki Yonezawa, Shinsuke Harada, Tsunenobu Kimoto, Manabu Takei
Publikováno v:
IEEE Transactions on Electron Devices. 62:396-404
Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d002661022b537992bc0912b19c4e4ac
https://doi.org/10.1109/ted.2014.2357812
https://doi.org/10.1109/ted.2014.2357812
Autor:
Manabu Arai, Kensuke Takenaka, Tadayoshi Deguchi, Shinji Takasu, Kenji Fukuda, Shuji Katakami, Hiroyuki Fujisawa, Manabu Takei, Hajime Okumura, Hitoshi Ishimori, Yoshiyuki Yonezawa
Publikováno v:
Materials Science Forum. :1038-1041
High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and their properties characterized. A high blocking voltage of 15 kV is achieved at room temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f5415d71e0d6f563c8dfa3b369a898
https://doi.org/10.4028/www.scientific.net/msf.778-780.1038
https://doi.org/10.4028/www.scientific.net/msf.778-780.1038
Publikováno v:
Reports of the City Planning Institute of Japan. 12:17-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309957988e813e8329ff31ad4425e856
https://doi.org/10.11361/reportscpij.12.1_17
https://doi.org/10.11361/reportscpij.12.1_17
Autor:
Kimiyoshi Yamasaki, Takashi Egawa, Atsushi Kamada, Manabu Arai, Tadayoshi Deguchi, Hideshi Tomita
Publikováno v:
IEICE transactions on electronics. (8):1343-1347
SUMMARY Current collapse of AlGaN/GaN heterostructure fieldeffect transistors (HFETs) formed on qualified epitaxial layers on Si substrates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbda3f16f0b69c68b750b247e39c083e
http://id.nii.ac.jp/1476/00005675/
http://id.nii.ac.jp/1476/00005675/
Publikováno v:
IEEE Electron Device Letters. 33:1249-1251
An excellent on/off current ratio of 1010 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I-V characteristics were achieved with the p-InGaN cap layer under the gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8601878dd76266a97818a9e4b1a52b0c
https://doi.org/10.1109/led.2012.2204854
https://doi.org/10.1109/led.2012.2204854
Autor:
Yukio Sano, Masaaki Miyajima, Kenji Fukuda, Katsunori Asano, Tsuyoshi Araoka, M. Yoshikawa, Katsumi Tatera, Hiroshi Kimura, Manabu Arai, Toshihiko Hayashi, Yasunori Tanaka, Dai Okamoto, Masayuki Harashima, Hajime Okumura, Naoki Kumagai, Mitsuo Okamoto, Tetsuo Hatakeyama, Tsunenobu Kimoto, Shinichiro Matsunaga, Yoshiyuki Yonezawa, Takashi Tsutsumi, Eisuke Morisaki, Manabu Takei, Akihiro Otsuki, Shinsuke Harada, Naoyuki Oose, Tomohisa Kato, Tomonori Mizushima, Youichi Makifuchi, Kensuke Takenaka, Hiroyuki Fujisawa, Mitsuru Sometani, Atsushi Tanaka, S. Ogata, Tadayoshi Deguchi, Koji Nakayama
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
4H-SiC carbon face flip-type n-channel implantation and epitaxial (IE)-IGBT with an epitaxial p ++ substrate was developed and its switching test was carried out. We were able to achieve an ultrahigh blocking voltage greater than 16 kV, extremely low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e4054c3110da6ceb6f43fa2be5e9f9
https://doi.org/10.1109/ispsd.2014.6856030
https://doi.org/10.1109/ispsd.2014.6856030
Autor:
Hiroyuki Fujisawa, Atsushi Tanaka, Katsunori Asano, S. Ogata, Tadayoshi Deguchi, Shinichiro Matsunaga, Manabu Takei, Tomonori Mizushima, Hajime Okumura, Yoshiyuki Yonezawa, Kenji Fukuda, Naoki Kumagai, Toshihiko Hayashi, Manabu Arai, Kensuke Takenaka, Koji Nakayama
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
To examine the effect of the device structure on the on-state voltage (V on ), several types of ultrahigh-voltage 4H-SiC p-channel insulated-gate bipolar transistors (IGBTs) were fabricated. A p-channel IGBT with a retrograde charge storage layer (CS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4eaf2c91624beba87f424fd0235281
https://doi.org/10.1109/ispsd.2014.6856026
https://doi.org/10.1109/ispsd.2014.6856026
Autor:
Yasunori Tanaka, Toru Izumi, Yoshiyuki Yonezawa, Hajime Okumura, Shinsuke Harada, Koji Nakayama, Tadayoshi Deguchi, Kazushi Matsumoto, Dai Okamoto, Mina Ryo, Kenji Fukuda, Naoyuki Ohse, Kazuto Takao, Makoto Mizukami, Tomohisa Kato, Hiroyuki Fujisawa, Tsunenobu Kimoto, Toshihiko Hayashi, Shuji Katakami, Kensuke Takenaka, Shinji Takasu, Katsunori Asano, Manabu Arai, Hitoshi Ishimori, Chiharu Ota, Manabu Takei
Publikováno v:
2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).
Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97437e33533bc5b1eb44cabdd3fcd3a8
https://doi.org/10.1109/ipec.2014.6869990
https://doi.org/10.1109/ipec.2014.6869990
Autor:
M. Yoshikawa, Masaaki Miyajima, Naoki Kumagai, Dai Okamoto, Mitsuo Okamoto, Kensuke Takenaka, Kenji Fukuda, Masayuki Harashima, Takashi Tsutsumi, Eisuke Morisaki, Hiroyuki Fujisawa, Manabu Takei, Shinsuke Harada, Hajime Okumura, Mitsuru Sometani, Tomonori Mizushima, Naoyuki Oose, Yukio Sano, Youichi Makifuchi, Shinichiro Matsunaga, Tetsuo Hatakeyama, Yoshiyuki Yonezawa, Tadayoshi Deguchi, Tsunenobu Kimoto, Akihiro Otsuki, Katsumi Tatera, Yasunori Tanaka, Tsuyoshi Araoka, Hiroshi Kimura, Tomohisa Kato, Manabu Arai
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p++ collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48a04baac34facf165519f1b094f65d
https://doi.org/10.1109/iedm.2013.6724576
https://doi.org/10.1109/iedm.2013.6724576