Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Tadatsugu Itoh"'
Publikováno v:
Journal of The Electrochemical Society. 137:336-339
YBaCuO films were deposited on Si and MgO substrates by RF sputtering in Ar + O{sub 2} ambient. Composition in the film is quite different from that of the target. Interfacial reactions between the film and Si or MgO substrates has been investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e09ecf98bf97ea74d2b0a26745960d3
https://doi.org/10.1149/1.2086414
https://doi.org/10.1149/1.2086414
Publikováno v:
ChemInform. 21
YBaCuO films were deposited on Si and MgO substrates by RF sputtering in Ar + O{sub 2} ambient. Composition in the film is quite different from that of the target. Interfacial reactions between the film and Si or MgO substrates has been investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592887f17c49da90e765b9c4a8c4f6f8
https://doi.org/10.1002/chin.199014015
https://doi.org/10.1002/chin.199014015
Autor:
Tadatsugu Itoh, Kazuyoshi Shinada
Publikováno v:
Japanese Journal of Applied Physics. 17:1839-1844
B2O3 and B mixture for ion source material produced B2O2+ and B+ ions of large contents, which can be useful solid source material for B+ ion implantation. Auger electron spectroscopy was employed to investigate the depth distributions of B and O whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d89fee4bbb626e5878c9e5099625851
https://doi.org/10.1143/jjap.17.1839
https://doi.org/10.1143/jjap.17.1839
Autor:
Tadatsugu Itoh, Tae Earn Shim
Publikováno v:
Journal of Applied Physics. 65:486-490
Undoped GaAs (100) wafers were implanted with 150‐keV Sn+ and/or 50‐keV Si+ ions to doses of 5×1013–1×1014/cm2 at room temperature, and annealed at 850 °C for 15 min. The backscattering spectra showed a sufficient crystalline recovery at thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5937ba7607f3a7a7f1c8f3fe87256be6
https://doi.org/10.1063/1.343130
https://doi.org/10.1063/1.343130
Autor:
Tadatsugu Itoh, Masami Takeuchi
Publikováno v:
Japanese Journal of Applied Physics. 16:1809-1815
When oxygen implanted n-GaAs substrate is annealed in hydrogen gas flow without protection film, excess oxygen atoms diffuse out of the surface through arsenic vacancies because of capless annealing. Whereas implanted oxygen atoms do not diffuse inwa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148d09ac29baad1e22e268bf091bc477
https://doi.org/10.1143/jjap.16.1809
https://doi.org/10.1143/jjap.16.1809
Publikováno v:
SHINKU. 21:386-391
The effect of ions on the carrier concentration of Ga- or Sb-doped silicon epitaxial films grown by part ionized vapor deposition on (111) silicon substrates is investigated. The crystalline quality of films is examined by transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc1c1c052378ce4963c33e3324465404
https://doi.org/10.3131/jvsj.21.386
https://doi.org/10.3131/jvsj.21.386
Publikováno v:
SHINKU. 18:300-305
ESR measurements have been used to monitor radiation damage in ion-implanted silicon. When the Ar implantation dose is more than about 10 times the critical one for amorphization, both an amorphous center with g = 2.0055 and another new ESR center wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7e909dc010653f1abee0ca23e2f34f
https://doi.org/10.3131/jvsj.18.300
https://doi.org/10.3131/jvsj.18.300
Publikováno v:
Japanese Journal of Applied Physics. 15:1281-1286
An apparatus using a microprocessor is fabricated in order to correct and process the measured photoluminescence data. This is more advantageous for the data correction and processing than those mentioned before; moreover, it can be applied to other
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1740e1e554c29cf59240e7b11c52cc5
https://doi.org/10.1143/jjap.15.1281
https://doi.org/10.1143/jjap.15.1281
Publikováno v:
Journal of Applied Physics. 47:3603-3608
350‐keV He+ backscattering analysis was applied to the investigation of Ag photoinduced diffusion into As2S3 glass and proved to be suitable for the present purposes. Silver atoms diffuse into As2S3 by photoirradiation (termed ’’photodoping’
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a309d36f5297d3331c7de224a26bcab6
https://doi.org/10.1063/1.323165
https://doi.org/10.1063/1.323165
Autor:
Tadatsugu Itoh, Hiroshi Takai
Publikováno v:
Journal of Electronic Materials. 12:973-982
We have investigated a new technology for dielectric isolation of a Si film grown epitaxially on a porous silicon layer. After oxidation of the porous silicon layer, a Si on Ohcidized Porous Silicon(SOPS) structure can be obtained. It is proposed tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef918035a54c80cf1e77ec8502c23eae
https://doi.org/10.1007/bf02654968
https://doi.org/10.1007/bf02654968