Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Tadatoshi Tomita"'
Autor:
K. Matsuzaki, Takeo Nakano, Tadatoshi Tomita, Takahiro Kitano, H. Genjima, Makoto Muramatsu, K. Yamamoto
Publikováno v:
SPIE Proceedings.
Placement of cylinders in hole multiplication patterns for directed self-assembly is the topic of this computational study. A hole doublet process applying a corner rounded rectangle guide is the focus of this work. Placements including morphology fl
Autor:
Koichi Yatsuda, Shinichiro Kawakami, Mark Somervell, Toshikatsu Tobana, Benjamen M. Rathsack, Doni Parnell, Makoto Muramatsu, Seiji Nagahara, Ainhoa Romo Negreira, Makiko Dojun, Soichiro Okada, Etsuo Iijima, Tadatoshi Tomita, Hiroyuki Iwaki, Takashi Yamauchi, Takeo Nakano, Takahiro Kitano, Kathleen Nafus, Vinayak Rastogi, Fumiko Iwao, Takanori Nishi, Jean-Luc Peyre
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Directed Self-Assembly (DSA) is being extensively evaluated for application in semiconductor process integration.1-7 Since 2011, the number of publications on DSA at SPIE has exploded from roughly 26 to well over 80, indicating the groundswell of int
Publikováno v:
Alternative Lithographic Technologies VII.
We report computational study for directed self-assembly (DSA) on morphologies’ dislocation caused by block copolymers’ (BCPs’) thermal fluctuation in grapho-epitaxial cylindrical guides. The dislocation factor expressed as DSA-oriented placeme
Publikováno v:
SPIE Proceedings.
In this report, morphology of cylinders by block copolymer (BCP) in the corner rounded rectangle guide patterns is analyzed by simulation and compared with experimental results. In the case of the hole-multiplication, selection the guide pattern size
Autor:
Doni Parnell, Etsuo Iijima, Seiji Nagahara, Tadatoshi Tomita, Shinchiro Kawakami, Mark Somervell, Makiko Dojun, Takanori Nishi, Ainhoa Romo Negreira, Jean-Luc Peyre, Takeo Nakano, Koichi Yatsuda, Kathleen Nafus, Hiroyuki Iwaki, Mariko Ozawa, Takahiro Kitano, Takashi Yamauchi, Soichiro Okada, Takumi Ishiguro, Toshikatsu Tobana, Makoto Muramatsu, Benjamen M. Rathsack
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) is one of the most promising technologies for scaling feature sizes to 16 nm and below. Both line/space and hole patterns can be created with various block copolymer morphologies, and these materials allow for molecular-l
Autor:
Shinichiro Kawakami, Ali Mokhberi, Jason Sweis, Seiji Nagahara, Masami Aoki, Andrew Cross, Benjamen M. Rathsack, Tadatoshi Tomita, Hitoshi Kosugi, Takahiro Kitano, Makoto Muramatsu, Venkat Nagaswami, Ryota Harukawa
Publikováno v:
SPIE Proceedings.
This paper discusses the defect density detection and analysis methodology using advanced optical wafer inspection capability to enable accelerated development of a DSA process/process tools and the required inspection capability to monitor such a pr
Autor:
Mikiya Muramatsu, K. Matsuzaki, Tadatoshi Tomita, M. Matsukuma, Takeo Nakano, Takahiro Kitano
Publikováno v:
Alternative Lithographic Technologies V.
We report morphology of cylinder of diblock copolymers (BCP), which consist of polymer A and B, in cylindrical prepattern holes by dissipative particle dynamics simulation in order to predict optimal cylinder profile. Configuration of cylinder which
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Immersion lithography has been developed for 45nm technology node generation during the last several years. Currently, IC manufacturers are moving to high volume production using immersion lithography. Due to the demand of IC manufactures, as the cri
Autor:
Mireia Blanco Mantecon, Tadatoshi Tomita, Kirsten Ruck, Hitoshi Kosugi, Richard Moerman, Shinichi Hatakeyama, Masashi Enomoto, Heiko Weichert, Casper Roderik De Groot, Kathleen Nafus, Shin Inoue, Raf Stegen
Publikováno v:
SPIE Proceedings.
In order to prepare for the next generation technology manufacturing, ASML and TEL are working together to investigate the process performance of the LITHIUSi+/ TWINSCAN XT:1700i lithocluster through decreasing critical dimension patterning. In this
Autor:
Takeshi Shimoaoki, Masashi Enomoto, Tadatoshi Tomita, Hideharu Kyoda, Toshifumi Suganaga, Junichi Kitano
Publikováno v:
SPIE Proceedings.
As a powerful candidate for a lithography technique that can accommodate the scaling-down of semiconductors, 193-nm immersion lithography-which realizes a high numerical aperture (NA) and uses deionized water as the medium between the lens and wafer