Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Tadashi Ohachi"'
Autor:
Yuanhua Sang, Kun Cui, Dehui Sun, Qian Yu, Huaqiang Cai, Hong Liu, Tadashi Ohachi, Xueliang Kang, Shi Xuxia, Xiaoyong Qin
Publikováno v:
Journal of Applied Crystallography. 48:377-385
MgO-doped stoichiometric LiTaO3(MgO:SLT) is one of the most promising nonlinear materials. However, its industrial application is limited by the poor optical quality caused by the nonhomogeneous distribution of magnesium. Herein, an MgO:SLT polycryst
Publikováno v:
Materials Research Bulletin. 50:379-384
A novel strategy for synthesis of TiH2 layer on surface of metallic titanium by using an acid-hydrothermal method was proposed. During the synthesis process, no any elemental hydrogen was involved. X-ray powder diffraction, energy-dispersive X-ray sp
Publikováno v:
physica status solidi c. 8:1491-1494
An atom probe of two parallel electrodes is proposed to monitor adsorbed (ADS) nitrogen atoms in situ during growth of β-Si3N4 using indirect exposure of effusing active nitrogen beam from the radio frequency induction coupled plasma cell. The β-Si
Publikováno v:
Journal of Crystal Growth. 318:468-473
A new spiral parallel mesh electrode (PME) is presented to control active nitrogen species in plasma-assisted molecular beam epitaxial (PA-MBE) growth of group III nitrides and their alloys. Direct flux of active nitrogen from radio frequency inducti
Publikováno v:
Solid State Ionics. 178:1023-1026
The electronic structure and diffusion paths of Ag ions in the rocksalt structured phase of AgI (rs-AgI) are studied based on the full-potential linear-muffin-tin-orbital (FP-LMTO) method. Ag ions in the rs-AgI start to migrate along the 〈111〉 di
Publikováno v:
Hyomen Kagaku. 24:642-647
An ab initio-based approach was made to understand the influences of temperature and beam equivalent pressure (BEP) on the structural stability of GaAs surfaces. The theoretical approach incorporates free energy of vapor phase; therefore we can calcu
Publikováno v:
Surface Science. :285-289
The newly developed first-principles calculation based computational method incorporating chemical potential of As 2 gas is applied to understand the influence of As 2 pressure on GaAs growth kinetics under the molecular beam epitaxy growth condition
Autor:
T. Ito, Kenji Shiraishi, Akihito Taguchi, Yoshihiro Kangawa, Toshiharu Irisawa, Tadashi Ohachi
Publikováno v:
Applied Surface Science. 190:517-520
Diffusion length of Ga on the GaAs(0 0 1)-(2×4)β2 is investigated by a newly developed Monte Carlo-based computational method. The new computational method incorporates chemical potential of Ga in the vapor phase and Ga migration potential on the r
Publikováno v:
Journal of Crystal Growth. :414-418
The effect of NaOH concentration on the electrical nucleation of sodium acetate trihydrate crystals from solution was studied by measuring the current and voltage curves, and by observing interference fringes during the application of constant voltag
Publikováno v:
Surface Science. 493:178-181
We propose a new theoretical approach for studying adsorption–desorption behavior of atoms on semiconductor surfaces. The new theoretical approach based on the ab initio calculations incorporates the free energy of gas phase; therefore we can calcu