Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Tadahiko Takikawa"'
Autor:
Naoko Kuwahara, Tadahiko Takikawa, Hiroshi Fujita, Naoya Hayashi, Morihisa Hoga, Masashi Sakaki, Hisatake Sano, Masaharu Fukuda, Mikio Ishikawa
Publikováno v:
Microelectronic Engineering. 85:1514-1517
A new technique of hybrid use of a 100kV-SB (spot beam) EB writer and a 50kV-VSB (variable shaped beam) EB writer, based on an outline-and-body method, is proposed and examined for making nano-imprint molds. Here an original layer is split into an ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe654f5f62b02ee7435b35891a500522
https://doi.org/10.1016/j.mee.2008.02.012
https://doi.org/10.1016/j.mee.2008.02.012
Autor:
Morihisa Hoga, Naoko Kuwahara, Tadahiko Takikawa, Hisatake Sano, Satoshi Yusa, Minoru Kitada, Horoshi Fujita
Publikováno v:
Microelectronic Engineering. 84:825-828
Large single-membrane stencil masks have been developed for electron-beam lithography. Since a large membrane induces large image placement (IP) error, which is pattern dependent, a method of correcting EB data has been studied to compensate the memb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::326138e95f9ad947e604987923da86f3
https://doi.org/10.1016/j.mee.2007.01.040
https://doi.org/10.1016/j.mee.2007.01.040
Autor:
Chia-Wen Lin, Jack Jau, Yan Zhao, Tadahiko Takikawa, Chiyan Kuan, Fei Wang, Long Ma, Takeya Shimomura, Shogo Narukawa, Naoya Hayashi, Tsukasa Abe
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c310c31a1595864b44be56bb77d6cc
https://doi.org/10.1117/12.976017
https://doi.org/10.1117/12.976017
Autor:
Vincent Farys, Clyde Browning, Luc Martin, Tadahiko Takikawa, Naoya Hayashi, Patrick Schiavone, Shogo Narukawa, Frank Sundermann
Publikováno v:
SPIE Proceedings.
The new generations of photomasks are seen to bring more and more challenges to the mask manufacturer. Maskshops face two conflicting requirements, namely improving pattern fidelity and reducing or at least maintaining acceptable writing time. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91b78f17fa0009b84787e2ed82230c58
https://doi.org/10.1117/12.981609
https://doi.org/10.1117/12.981609
Publikováno v:
SPIE Proceedings.
EUVL pilot line will be launched in 2012 with several pre-production tools installed in world wide. Since there will be still the productivity issue on the exposure tool, certain demand of EUV masks may be required in 2012. In this presentation, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f04bd226a4b7ed43328023fcb2f57cef
https://doi.org/10.1117/12.923125
https://doi.org/10.1117/12.923125
Autor:
Hiroshi Mohri, Jack Jau, Tadahiko Takikawa, Long Eric Ma, Yuichi Inazuki, Fei Wang, Chiyan Kuan, Takeya Shimomura, Kawashima Satoshi, Naoya Hayashi, Tsukasa Abe, Hong Xiao, Yan Zhao
Publikováno v:
SPIE Proceedings.
Fabrication of defect free EUV masks including their inspection is the most critical challenge for implementing EUV lithography into semiconductor high volume manufacturing (HVM) beyond 22nm half-pitch (HP) node. The contact to bit-line (CB) layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720785f374a13725d77021f755f9e6b4
https://doi.org/10.1117/12.879565
https://doi.org/10.1117/12.879565
Autor:
Yuichi Inazuki, Naoya Hayashi, Hiroshi Mohri, Takeya Shimomura, Tsukasa Abe, Tadahiko Takikawa
Publikováno v:
27th European Mask and Lithography Conference.
Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8123489cd81ce818f59b7a67b7792b50
https://doi.org/10.1117/12.896886
https://doi.org/10.1117/12.896886
Autor:
Yan Zhao, Fei Wang, Tsukasa Abe, Chiyan Kuan, Hiroshi Mohri, Naoya Hayashi, Hong Xiao, Takeya Shimomura, Tadahiko Takikawa, Jack Jau, Yuichi Inazuki, Long Ma
Publikováno v:
SPIE Proceedings.
Fabrication of defect free EUV mask is one of the most critical roadblocks for implementing EUV lithography into semiconductor high volume manufacturing for 22nm half-pitch (HP) node and beyond. At the same time, development of quality assurance proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d6a3eb464daaf6ae9f87828e5b689a
https://doi.org/10.1117/12.868171
https://doi.org/10.1117/12.868171
Publikováno v:
SPIE Proceedings.
The load of VSB-EB mask writers has significantly increased since particularly RET/OPC and CMP dummy pattern generation technologies were widely adopted into designs at advanced nodes, with the result that the volume of mask data patterns was increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1cd5bd5739087e9b444e1557a8e104
https://doi.org/10.1117/12.864104
https://doi.org/10.1117/12.864104
Publikováno v:
SPIE Proceedings.
Achieving the specifications of line width roughness (LWR), sensitivity and resolution of wafer resist is one of the top challenges of bringing extreme ultraviolet lithography (EUVL) into high volume manufacturing. At the same time, EUV mask LWR is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437a0d82454b50299e10176b9514c776
https://doi.org/10.1117/12.867910
https://doi.org/10.1117/12.867910