Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tadaharu Minato"'
Autor:
Kensuke Taguchi, Hideki Haruguchi, Kazuhiko Hasegawa, Yasuo Ata, Eisuke Suekawa, Naoto Kaguchi, Yu Nakashima, Yasuhiro Kagawa, Tadaharu Minato
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 137:6-12
Autor:
Keiichiro Ide, Daisaku Yoshida, Yoji Nakata, Megumi Yachi, Kazuya Sano, Hideki Haruguchi, Yukio Matsushita, Soneda Shinya, Yasuo Ata, Kudo Tomohito, Tadaharu Minato
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In Unclamped Inductive Switching (UIS) with a small capacitance, the L load current flows into the breakdown point selectively. Vava, which is a peak voltage during this UIS turn-off, is also widely changed by the ON state forward voltage drop Von. A
Autor:
Tadaharu Minato, Y. Kusakabe, T. Hagihara, Y. Fujita, Suzuki Kenji, H. Uemura, S. Momii, K. Uryu, Yasuhiro Yoshiura, Y. Miyazaki, Masayoshi Tarutani, K. Takakura, M. Nakamura
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The applied voltage (Vcc) dependence of SEB characteristics of the Failure In Time (FIT) is generally estimated by the accelerated test, because it takes a long time to cause SEB under the natural condition. So, it is meaningful to confirm the relati
Autor:
Shigeto Honda, Tadaharu Minato, Kazuhiro Shimizu, Akihiko Furukawa, Yoshiaki Terasaki, Kazunari Hatade, Yoshifumi Takata
Publikováno v:
IET Power Electronics (Wiley-Blackwell); 2019, Vol. 12 Issue 15, p1-11, 11p
Autor:
Suzuki Kenji, K. Uryu, H. Muraoka, Tadaharu Minato, K. Takakura, Yasuhiro Yoshiura, M. Tabata, N. Taniguchi, Shinji Aono, Masayoshi Tarutani
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Through the physical analysis, the first and minimum destruction point of the power semiconductor chip is precisely identified as around the main pn junction. It well agrees with the Impact Ionization (I/I) peak enhanced by an electric field crowding
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In the IGBT as bipolar silicon power device, it is widely used a carrier lifetime control technique, i.e. an inducing a carrier trap level within the silicon band gap by an electron beam irradiation with a post thermal annealing. Sometimes, the elect
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
Through the simulation, a concept for the next generation MOSFET or IGBT as a single chip solution by combining Super Junction MOSFET (SJ-MOSFET) with Reverse Conducting IGBT (RC-IGBT) is presented. Since the MOSFET's fundamental trade-off relationsh
Autor:
Kazunari Hatade, K. Takano, Tadaharu Minato, Chihiro Tadokoro, Mitsuru Kaneda, J. Yahiro, Shigeru Kusunoki
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
For IGBTs, there are strong requirements for high current density usage from the cost reduction point of view and high speed operation from the system efficiency point of view. Strong carrier lifetime control is needed to reduce a turn-off loss (Eoff
Autor:
T. Takayama, A. Narazaki, S. Hirakawa, S. Sudo, Hideki Takahashi, N. Asano, Tadaharu Minato, T. Shirasawa, K. Ogata
Publikováno v:
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
The next innovation in the power modules has come up with the corroboration between the power chip technology like CSTBT and die packaging technology like the direct transfer mold module, via wireless bonding technology, that is our technology "direc