Zobrazeno 1 - 10
of 554
pro vyhledávání: '"Tackeuchi, A."'
We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409089
Autor:
Neogi, Arup, Lee, Chang-Won, Everitt, Henry O., Kuroda, Takamasa, Tackeuchi, Atsushi, Yablonovitch, Eli
Using time-resolved photoluminescence measurements, the recombination rate in an In$_{0.18}$Ga$_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of en
Externí odkaz:
http://arxiv.org/abs/cond-mat/0204150
Autor:
Xue Zhang, Zhiwei Xing, Wenxian Yang, Haibing Qiu, Ying Gu, Yuta Suzuki, Sakuya Kaneko, Yuki Matsuda, Shinji Izumi, Yuichi Nakamura, Yong Cai, Lifeng Bian, Shulong Lu, Atsushi Tackeuchi
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 800 (2022)
Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are bene
Externí odkaz:
https://doaj.org/article/0300ab6fcf98492d8d7f55dff757606f
Autor:
Ji, Lian, Tan, Ming, Ding, Chao, Honda, Kazuki, Harasawa, Ryo, Yasue, Yuya, Wu, Yuanyuan, Dai, Pan, Tackeuchi, Atsushi, Bian, Lifeng, Lu, Shulong, Yang, Hui
Publikováno v:
In Journal of Crystal Growth 15 January 2017 458:110-114
Autor:
Xue Zhang, Wenxian Yang, Zhiwei Xing, Haibing Qiu, Ying Gu, Lifeng Bian, Shulong Lu, Hua Qin, Yong Cai, Yuta Suzuki, Sakuya Kaneko, Yuki Matsuda, Shinji Izumi, Yuichi Nakamura, Atsushi Tackeuchi
Publikováno v:
Crystals, Vol 11, Iss 11, p 1312 (2021)
InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted mole
Externí odkaz:
https://doaj.org/article/d94e1467a5344c748954088c7e2bc951
Autor:
Yokoyama, N., Imamura, K., Takatsu, M., Mori, T., Adachihara, T., Sugiyama, Y., Sakuma, Y., Tackeuchi, A., Muto, S.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 1996 Oct . 354(1717), 2399-2411.
Externí odkaz:
https://www.jstor.org/stable/54777
Akademický článek
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Autor:
Hao Wu, Lian Ji, Ryo Harasawa, Yuya Yasue, Takanori Aritake, Canyu Jiang, Shulong Lu, Atsushi Tackeuchi
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085119-085119-7 (2016)
The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar
Externí odkaz:
https://doaj.org/article/702481f04dff48048011222dc2cbc1f0
Autor:
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027120-027120-7 (2015)
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED
Externí odkaz:
https://doaj.org/article/04cdc22b600a441dab74a284a6fcb195
Akademický článek
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